| PART |
Description |
Maker |
| CSB1370 CSB1370F CSB1370D CSB1370E |
30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 160 - 320 hFE.
30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 100 - 200 hFE.
30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 120 hFE.
PNP Silicon Epitaxial Power Transistor
|
CDIL[Continental Device India Limited]
|
| CFB612 |
60.000W Medium Power PNP Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 1000 hFE.
TRANSISTOR | BJT | DARLINGTON | PNP | 120V V(BR)CEO | 6A I(C) | TO-220FP
|
Continental Device India Limited
|
| CFB949AQ CFD1275AQ CFB949AP CFD1275AP CFD1275R CFB |
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AQ
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949AQ
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275AP
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFB949AP
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 2500 hFE. Complementary CFB949R
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275P
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AR
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275A
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFB949
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949Q
|
Continental Device India Limited
|
| CSD794Y CSD794O CSD794AY |
10.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB744Y
10.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB744O
10.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB744AY
|
Continental Device India Limited
|
| BCX52-10 BCX52-16 BCP52-16 BCP52-10 BC52PA |
60 V, 1 A PNP medium power transistors
PNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages.
|
NXP Semiconductors
|
| CSD669AB |
20.000W Medium Power NPN Plastic Leaded Transistor. 160V Vceo, 1.500A Ic, 60 - 120 hFE.
|
Continental Device India Limited
|
| CJF122 |
30.000W Medium Power NPN Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 2000 hFE.
|
Continental Device India Limited
|
| CSB1065 CSB1065N CSB1065R CSB1065P CSB1065Q |
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 56 - 390 hFE. Complementary CSD1506
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 56 - 120 hFE. Complementary CSD1506N
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 180 - 390 hFE. Complementary CSD1506R
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 82 - 180 hFE. Complementary CSD1506P
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 120 - 270 hFE. Complementary CSD1506Q
|
Continental Device India Limited
|
| CSD288 CSA614 CSA614Y |
25.000W Low Frequency PNP Plastic Leaded Transistor. 55V Vceo, 3.000A Ic, 120 - 240 hFE.
PNP/NPN PLASTIC POWER TRANSISTOR
|
CDIL[Continental Device India Limited]
|
| CFA1535Q |
15.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 1.000A Ic, 95 - 155 hFE. Complementary CFC3944Q
|
Continental Device India Limited
|
| BD535K BD536J BD534K BD538K BD538J BD534 BD537 |
50.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 8.000A Ic, 15 hFE.
50.000W Medium Power PNP Plastic Leaded Transistor. 45V Vceo, 8.000A Ic, 20 hFE.
; Package/Case:3-TO-220; Current, It av:16A; Gate Trigger Current Max, Igt:20mA
; Package/Case:3-TO-218X; Current, It av:25A; Gate Trigger Current Max, Igt:80mA
Triac; Triac Type:Internally Triggered; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):15A; Gate Trigger Current (QI), Igt:25uA; Package/Case:TO-220; Gate Trigger Current Max, Igt:1.5A
; Package/Case:3-TO-220; Current, It av:6A; Holding Current:50mA
Triac; Thyristor Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:10mA; Current, It av:6A; Gate Trigger Current Max, Igt:10mA; Holding Current:15mA RoHS Compliant: Yes
|
Continental Device India Limited
|
| 2SB1132 2SB1237 2SA1515S A5800347 2SB1132P 2SB1132 |
Medium Power Transistor 中等功率晶体
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | SC-62
From old datasheet system
Medium Power Transistor (-32A,-1A)
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
|
Rohm Co., Ltd.
Rohm CO.,LTD.
ROHM[Rohm]
|
