| PART |
Description |
Maker |
| AT28BV64B-25TC AT28BV64B-20PC AT28BV64B-20JI AT28B |
64K (8K x 8) Battery-Voltage?/a> Parallel EEPROM with Page Write and Software Data Protection
64K (8K x 8) Battery-Voltage⑩ Parallel EEPROM with Page Write and Software Data Protection
From old datasheet system
64K EEPROM with 64-Byte Page & Software Protection, 2.7-Volt
64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection
High Speed CMOS Logic Triple 3-Input OR Gates 14-SOIC -55 to 125 8K X 8 EEPROM 3V, 250 ns, PDSO28
64K (8K x 8) Battery-VoltageParallel EEPROM with Page Write and Software Data Protection 8K X 8 EEPROM 3V, 200 ns, PDSO28
|
ATMEL[ATMEL Corporation]
Atmel, Corp.
|
| AT27BV1024-12JC AT27BV1024-90VI AT27BV1024 AT27BV1 |
1 Megabit 64K x 16 Unregulated Battery-Voltage High Speed OTP CMOS EPROM 64K X 16 OTPROM, 90 ns, PDSO40
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| AT28BV64-30PC AT28BV64-30JC AT28BV64-30JI |
64K 8K x 8 Battery-Voltage CMOS E2PROM 8K X 8 EEPROM 3V, 300 ns, PDIP28
64K 8K x 8 Battery-Voltage CMOS E2PROM 8K X 8 EEPROM 3V, 300 ns, PQCC32
|
Atmel, Corp.
|
| CAT25C32 25C64 CAT25C64U14-1.8TE13 CAT25C64U14-TE1 |
32K/64K-BitSPISerialCMOSE2PROM
32K/64K-Bit SPI Serial CMOS E2PROM
64K 8K x 8 Battery-Voltage CMOS E2PROM 64KK的8电池电压的CMOS E2PROM
|
CATALYST[Catalyst Semiconductor]
|
| CAT24WC32LE1.8TE13B CAT24WC32PE1.8TE13B CAT24WC32W |
64K 8K x 8 Battery-Voltage CMOS E2PROM 64K8K的8电池电压的CMOS E2PROM
64K 8K x 8 Battery-Voltage CMOS E2PROM 64KK的8电池电压的CMOS E2PROM
|
EEPROM
BCD Semiconductor Manufacturing, Ltd.
Vishay Intertechnology, Inc.
Samtec, Inc.
|
| AT27BV512-12JC AT27BV512-12JI AT27BV512-12RC AT27B |
High Speed CMOS Logic Decade Counter/Divider with 10 Decoded Outputs 16-SOIC -55 to 125 64K X 8 OTPROM, 90 ns, PDSO28
High Speed CMOS Logic Decade Counter/Divider with 10 Decoded Outputs 16-PDIP -55 to 125 64K X 8 OTPROM, 150 ns, PDSO28
512K 64K x 8 Unregulated Battery-Voltage High Speed OTP CMOS EPROM
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| AT27LV512A07 AT27LV512A-55RU AT27LV512A-90JI AT27L |
90NS, SOIC, IND TEMP, GREEN(EPROM) 64K X 8 OTPROM, 55 ns, PDSO28
512K (64K x 8) Low Voltage OTP EPROM
|
Atmel, Corp.
ATMEL Corporation
|
| CY7C1332 CY7C1331 7C1331 |
64K x 18 Synchronous Cache 3.3V RAM(3.3V 64K x 18 同步高速缓冲存储器 RAM) 64K的18同步高速缓.3V的内存电压（3.3V 64K的18同步高速缓冲存储器的RAM
From old datasheet system
64K x 18 SynchronousCache 3.3V RAM
|
Cypress Semiconductor Corp.
|
| W27C520S-70 W27C520 W27C520W-90 W27C520S-90 W27C52 |
64K X 8 ELECTRICALLY ERASABLE EPROM 64K X 8 EEPROM 5V, 70 ns, PDSO20
BOX 2.53X1.73X.65 W/4 BTNS ALMOND 64K X 8 EEPROM 3V, 90 ns, PDSO20
From old datasheet system
|
Winbond Electronics, Corp.
Winbond Electronics Corp
WINBOND[Winbond]
|
| PB137 6278 PB137ACV |
From old datasheet system
POSITIVE VOLTAGE REGUALTOR FOR BATTERY CHARGER
POSITIVE VOLTAGE REGULATOR FOR BATTERY CHARGER
|
意法半导
STMicroelectronics
SGS Thomson Microelectronics
|
| IDT71T016SA15BFI IDT71T016SA10PH IDT71T016SA10PHI |
2.5V CMOS Static RAM 1 Meg (64K x 16-Bit) 64K X 16 STANDARD SRAM, 10 ns, PDSO44
2.5V CMOS Static RAM 1 Meg (64K x 16-Bit) .5V的CMOS静态RAM 1梅格4K的x 16位）
P-Channel NexFET Power MOSFET 6-SON -55 to 150 64K X 16 STANDARD SRAM, 12 ns, PBGA48
|
Integrated Device Technology, Inc.
|
| W27C512-45 W27C512P-12 W27C512P-45 W27C512P-70 W27 |
FAN 24 DC MUFFIN MC24H3 64K X 8 EEPROM 12V, 90 ns, PDIP28
Shielded Paired Cable; Number of Conductors:8; Conductor Size AWG:18; No. Strands x Strand Size:19 x 30; Jacket Material:Polyvinylchloride (PVC); Number of Pairs:4; Leaded Process Compatible:Yes; Voltage Nom.:300V RoHS Compliant: Yes
64K X 8 ELECTRICALLY ERASABLE EPROM
|
Winbond Electronics, Corp.
Winbond Electronics Corp
WINBOND[Winbond]
|
