| PART |
Description |
Maker |
| BCP51115 |
45 V, 1 A PNP medium power transistors - Complement: BCP54 ; fT min: 115 MHz; hFE max: 250 ; hFE min: 40 ; I<sub>C</sub> max: 1000 mA; Polarity: PNP ; Ptot max: 1300 mW; VCEO max: 45 V; Package: SOT223 (SC-73); Container: Tape reel smd
|
NXP SEMICONDUCTORS
|
| BCX56 BCX56135 |
80 V, 1 A NPN medium power transistors - fT min: 130 MHz; hFE max: 250 ; hFE min: 40 ; I<sub>C</sub> max: 1000 mA; Polarity: NPN ; Ptot max: 1300 mW; VCEO max: 80 V; Package: SOT89 (MPT3; UPAK); Container: Tape reel smd
|
NXP SEMICONDUCTORS
Philips
|
| GRM42-2X7R184K016AD GRP1555C1H3R3CZ01E GRM36C0G101 |
CAPACITOR, CERAMIC, MULTILAYER, 16 V, X7R, 0.18 uF, SURFACE MOUNT, 1210 CHIP
CAP 3.3PF 50V /-0.25PF C0G SMD-0402 TR-7 SN-PB CAPACITOR, CERAMIC, MULTILAYER, 50 V, C0G, 0.0000033 uF, SURFACE MOUNT, 0402
CAP,0402,NPO,100PF /-5% CAPACITOR, CERAMIC, MULTILAYER, 50 V, C0G, 0.0001 uF, SURFACE MOUNT, 0402
|
Murata Manufacturing Co., Ltd.
|
| MSOP-10PP |
A1 : MIN 0.000 MAX 0.150 A2 : MIN 0.750 MAX 0.952
|
Analog Microelectronics
|
| NMC0402NPO680J50TRP NMC0805NPO680J50TRP NMC0603NPO |
CAPACITOR,SMD 402,68PF,50V,5% CAPACITOR, CERAMIC, MULTILAYER, 50 V, C0G, 0.000068 uF, SURFACE MOUNT, 0402
CAPACITOR, 68PF 50V 0805 5% NPO CAPACITOR, CERAMIC, MULTILAYER, 50 V, C0G, 0.000068 uF, SURFACE MOUNT, 0805
CAP 68PF 0603 5% 50V NPO CAPACITOR, CERAMIC, MULTILAYER, 50 V, C0G, 0.000068 uF, SURFACE MOUNT, 0603
CAP/CERAMIC/FIX/SMD/470PF/50V/5%/0603 CAPACITOR, CERAMIC, MULTILAYER, 50 V, C0G, 0.00047 uF, SURFACE MOUNT, 0603
CAP/CERAMIC/FIX/SMD/47PF/50V/5%/0603 CAPACITOR, CERAMIC, MULTILAYER, 50 V, C0G, 0.000047 uF, SURFACE MOUNT, 0603
SMD-CAP,CER,47PF,5%,100V,NPO,.08X.05",TR CAPACITOR, CERAMIC, MULTILAYER, 100 V, C0G, 0.000047 uF, SURFACE MOUNT, 0805
33PF CAP 50V 10% NPO 0402 JAN 25/02 CAPACITOR, CERAMIC, MULTILAYER, 50 V, C0G, 0.000033 uF, SURFACE MOUNT, 0402
|
NIC Components, Corp.
|
| CX380D5 |
Solid-State PC Board Relay; Output Device:SCR; Output Voltage Max:530Vrms; Output Voltage Min:48Vrms; Control Voltage Max:15VDC; Control Voltage Min:4VDC; Load Current Max:5A; Switching:Zero Cross; Operating Voltage Max:530V
|
CRYDOM CORP
|
| KN4400S KN4401S |
CAP 100PF 50V 5% NPO(C0G) SMD-0402 TR-7-PA LOW-ESR
EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING)
|
KEC Holdings
KEC[KEC(Korea Electronics)]
|
| KN3904 |
CAP 56PF 500V 5% NPO(C0G) SMD-0402 TR-7-PA LOW-ESR 外延平面NPN晶体管（通用，开关）
EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING)
|
KEC Holdings
KEC[KEC(Korea Electronics)]
http://
|
| CMRA6065 CMRA6065EP |
Solid-State DIN Rail Mount Relay; Output Device:SCR; Output Voltage Max:660Vrms; Output Voltage Min:48Vrms; Control Voltage Max:140Vrms; Control Voltage Min:90Vrms; Load Current Max:65Arms; Switching:Zero Cross RoHS Compliant: Yes
TRIGGER OUTPUT SOLID STATE RELAY, 4000 V ISOLATION-MAX
|
CRYDOM CORP
|
| 15KPJ45 15KPJ45A 15KPJ45C 15KPJ45CA 15KPJ58 15KPJ5 |
Glass passivated junction transient voltage suppressor. Vrwm = 210 V. Vbr(min/max) = 231/296.1 V @ It = 1.0 mA. Ir = 5 uA. Vc = 376 V @ Ipp = 40 A.
Glass passivated junction transient voltage suppressor. Vrwm = 190 V. Vbr(min/max) = 209/243.2 V @ It = 1.0 mA. Ir = 5 uA. Vc = 308 V @ Ipp = 49 A.
Glass passivated junction transient voltage suppressor. Vrwm = 220 V. Vbr(min/max) = 242/310.2 V @ It = 1.0 mA. Ir = 5 uA. Vc = 394 V @ Ipp = 38 A.
Glass passivated junction transient voltage suppressor. Vrwm = 110 V. Vbr(min/max) = 122/154.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 196 V @ Ipp = 77 A.
Glass passivated junction transient voltage suppressor. Vrwm = 160 V. Vbr(min/max) = 178/205.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 259 V @ Ipp = 58 A.
Glass passivated junction transient voltage suppressor. Vrwm = 160 V. Vbr(min/max) = 178/226.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 287 V @ Ipp = 52 A.
Glass passivated junction transient voltage suppressor. Vrwm = 130 V. Vbr(min/max) = 144/182.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 231 V @ Ipp = 65 A.
Glass passivated junction transient voltage suppressor. Vrwm = 120 V. Vbr(min/max) = 133/169.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 214 V @ Ipp = 70 A.
GLASS PASSIVATED JUNCTION TRANSIENT (VOLTAGE SUPPRESSOR VOLTAGE- 17 to 220 Volts 15000 Watt Peak Pulse Power) 玻璃钝化结瞬态（电压抑制电压20伏特175000脉冲峰值功率）
GLASS PASSIVATED JUNCTION TRANSIENT (VOLTAGE SUPPRESSOR VOLTAGE- 17 to 220 Volts 15000 Watt Peak Pulse Power) 玻璃钝化结瞬态（电压抑制电压20伏特75000脉冲峰值功率）
GLASS PASSIVATED JUNCTION TRANSIENT (VOLTAGE SUPPRESSOR VOLTAGE- 17 to 220 Volts 15000 Watt Peak Pulse Power) 玻璃钝化结瞬态（电压抑制电压220伏特75000脉冲峰值功率）
Glass passivated junction transient voltage suppressor. Vrwm = 120 V. Vbr(min/max) = 133/153.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 193 V @ Ipp = 78 A.
Glass passivated junction transient voltage suppressor. Vrwm = 130 V. Vbr(min/max) = 144/165.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 209 V @ Ipp = 72 A.
Glass passivated junction transient voltage suppressor. Vrwm = 170 V. Vbr(min/max) = 189/217.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 275 V @ Ipp = 55 A.
Glass passivated junction transient voltage suppressor. Vrwm = 110 V. Vbr(min/max) = 122/140.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 177 V @ Ipp = 85 A.
Glass passivated junction transient voltage suppressor. Vrwm = 170 V. Vbr(min/max) = 189/239.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 304 V @ Ipp = 49 A.
Glass passivated junction transient voltage suppressor. Vrwm = 190 V. Vbr(min/max) = 209/267.4 V @ It = 1.0 mA. Ir = 5 uA. Vc = 340 V @ Ipp = 44 A.
Glass passivated junction transient voltage suppressor. Vrwm = 210 V. Vbr(min/max) = 231/296.1 V @ It = 1.0 mA. Ir = 5 uA. Vc = 340 V @ Ipp = 44 A.
|
Pan Jit International I...
PANJIT[Pan Jit International Inc.]
PanJit International Inc.
PanJit International, Inc.
|
| TSOT-23 |
MILLIMETERS MIN 0.80 MAX 1.30 INCHES MIN 0.0315 MAX 0.0512
|
Analog Microelectronics
|
|
