| PART |
Description |
Maker |
| SI4300DY SI4300DY-TI |
N-Channel Reduced Qg, Fast Switching MOSFET with Schottky N-Channel 30-V (D-S), Reduced Qg Fast Switching MOSFET with Schottky Diode
|
VISAY[Vishay Siliconix]
|
| SI4384DY |
N-Channel Reduced Qg, Fast Switching MOSFET
|
Vishay Siliconix
|
| SI4884DY |
N-Channel Reduced Qg, Fast Switching MOSFET
|
Vishay
|
| SI4362BDY |
N-Channel 30-V (D-S) Reduced Qgd, Fast Switching WFET
|
Vaishali Semiconductor
|
| SI4368DY SI4368DY-T1-E3 SI4368DY-E3 |
N-Channel Reduced Qg, Fast Switching WFET N沟道减少Qg和快速切换WFET
|
Vishay Intertechnology, Inc. Vishay Intertechnology,Inc. VISAY[Vishay Siliconix]
|
| SI4824DY |
Asymmetric N-Channel, Reduced Qg, Fast Switching MOSFET
|
Vishay Siliconix
|
| KI4300DY |
N-Channel 30-V (D-S), Reduced Qg Fast Switching MOSFET with Schottky Diode
|
Guangdong Kexin Industrial Co.,Ltd
|
| DVCR476.3LF DXT49310.000A20 DXT49310.000A203 DXT49 |
CRYSTALS REDUCED HEIGHT DXT493
|
Dubilier
|
| C527RT320-0303 C460RT320-0305 C470RT320-0301 C527R |
Reduced Forward Voltage 3.1 V Typical at 20 mA
|
Cree, Inc
|
| MT49H8M32 MT49H8M32FM |
REDUCED LATENCY DRAM RLDRAM
|
Micron Technology
|