| PART |
Description |
Maker |
| MTP3N100E MTP3N100E_D ON2598 3N100E MTP3N100E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM
3 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
MOTOROLA[Motorola, Inc]
Motorola, Inc.
ON SEMICONDUCTOR
|
| MAPD-009673-C2DA40 |
5 MHz - 1000 MHz RF/MICROWAVE SPLITTER, 2.2 dB INSERTION LOSS ROHS COMPLIANT, SM-150, 6 PIN
2 Way Power Divider 5 to 1000 MHz
|
M/A-COM Technology Solutions, Inc.
|
| 1014-12 |
12 W, 28 V, 1000-1400 MHz common base transistor
12 Watt - 28 Volts, Class C Microwave 1000 - 1400 MHz
L BAND, Si, NPN, RF POWER TRANSISTOR
|
GHz Technology
List of Unclassifed Manufacturers
ETC[ETC]
|
| TPR1000 |
Transponder/ 1090 MHz, Class C, Common Base, Pulsed; P(out) (W): 1000; P(in) (W): 250; Gain (dB): 6; Vcc (V): 50; Pulse Width (µsec): 10; Duty Cycle (%): 1; Case Style: 55KV-1 L BAND, Si, NPN, RF POWER TRANSISTOR
1000 Watts, 45 Volts, Pulsed Avionics 1090 MHz
high power COMMON BASE bipolar transistor.
|
Microsemi, Corp.
ETC[ETC]
GHZTECH[GHz Technology]
List of Unclassifed Manufacturers
|
| SMA18-1 A18-1 A18-1_1 CA18-1 A18-11 |
10 MHz - 1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
Cascadable Amplifier 10 to 1000 MHz
|
MACOM[Tyco Electronics]
|
| 0910-60M |
60 Watts - 40 Volts, 150us, 5% Radar 890 - 1000 MHz
P-Band 890-1000 MHz; P(out) (W): 60; P(in) (W): 9.5; Gain (dB): 8; Vcc (V): 40; Pulse Width (µsec): 150; Duty Cycle (%): 5; Case Style: 55AW-1 UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technolo...
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
| LF2805A |
RF MOSFET Power Transistor, 5W, 28V 500 - 1000 MHz
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
RF MOSFET Power Transistor/ 5W/ 28V 500 - 1000 MHz
|
Tyco Electronics
|
| CA176.8PF/-1PF500V CA186.8PF/-0.5PF1000V CA184.7PF |
CAPACITOR, MICA, 500 V, 0.0000068 uF, THROUGH HOLE MOUNT AXIAL LEADED
CAPACITOR, MICA, 1000 V, 0.0000068 uF, THROUGH HOLE MOUNT AXIAL LEADED
CAPACITOR, MICA, 1000 V, 0.0000047 uF, THROUGH HOLE MOUNT AXIAL LEADED
CAPACITOR, MICA, 5000 V, 0.000068 uF, THROUGH HOLE MOUNT AXIAL LEADED
CAPACITOR, MICA, 1000 V, 0.000015 uF, THROUGH HOLE MOUNT AXIAL LEADED
CAPACITOR, MICA, 1000 V, 0.00068 uF, THROUGH HOLE MOUNT AXIAL LEADED
CAPACITOR, MICA, 1000 V, 0.00047 uF, THROUGH HOLE MOUNT AXIAL LEADED
CAPACITOR, MICA, 300 V, 0.001 uF, THROUGH HOLE MOUNT AXIAL LEADED
CAPACITOR, MICA, 1000 V, 0.0012 uF, THROUGH HOLE MOUNT AXIAL LEADED
CAPACITOR, MICA, 1000 V, 0.0039 uF, THROUGH HOLE MOUNT AXIAL LEADED
CAPACITOR, MICA, 1000 V, 0.000012 uF, THROUGH HOLE MOUNT AXIAL LEADED
CAPACITOR, MICA, 500 V, 0.0068 uF, THROUGH HOLE MOUNT AXIAL LEADED
CAPACITOR, MICA, 1000 V, 0.0027 uF, THROUGH HOLE MOUNT AXIAL LEADED
CAPACITOR, MICA, 1000 V, 0.00056 uF, THROUGH HOLE MOUNT AXIAL LEADED
CAPACITOR, MICA, 1000 V, 0.0018 uF, THROUGH HOLE MOUNT AXIAL LEADED
|
Lattice Semiconductor, Corp.
SPC Technology
IRC Advanced Film
Hokuriku Electric Industry Co., Ltd.
TE Connectivity, Ltd.
ITT Interconnect Solutions
|
| MAPDCT0030 MAPD-007985-CT30TB |
2 Way 0o Power Divider 5 to 1000 MHz
2 Way 0篓卢 Power Divider 5 to 1000 MHz
|
M/A-COM Technology Solutions, Inc.
|
| 1N4002GP 1N4005GP 1N4003GP 1N4007GP 1N4001GP 1N400 |
1 Amp Glass PassivatedRectifier 50 - 1000 Volts 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41
|
Micro Commercial Components, Corp.
Micro Commercial Components Corp.
MCC[Micro Commercial Components]
|
| 0510-50A |
50 W, 28 V, 500-1000 MHz common emitter transistor
50 Watts, 28 Volts, Class AB Defcom 500 - 1000 MHz
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3.7A I(C) | SOT-324VAR
晶体管|晶体管|叩| 60V的五（巴西）总裁| 3.7AI（丙）|的SOT - 324VAR
500-1000 MHz, Class AB, Common Emitter; fO (MHz): 1000; P(out) (W): 50; P(in) (W): 10; Gain (dB): 7; Vcc (V): 28; ICQ (A): 0.1; Case Style: 55AV-2
|
GHZTECH[GHz Technology]
MICROSEMI POWER PRODUCTS GROUP
|
|
