| PART |
Description |
Maker |
| CRF02 |
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 1.8 to 2.0; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV
|
Toshiba Corporation
|
| TMP86CS25AFG |
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 2.2 to 2.4; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: DO-35
|
Toshiba Corporation
|
| TMP19A71CYFG |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 22.93 to 23.96; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
|
Toshiba Corporation
|
| JTOS-200P |
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 5.5 to 5.8; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
|
Mini-Circuits
|
| TGF2961-SD |
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 8.3 to 9.1; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: LLD
|
TriQuint Semiconductor,Inc.
|
| LOR976 |
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 5.6 to 5.9; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
|
Osram Opto Semiconductors GmbH
|
| EE-X1088 |
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 2.6 to 2.8; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
|
Omron Electronics LLC
|
| TMP86FS49BUG |
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 3.5 to 3.7; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: DO-35 8位微控制
|
Toshiba, Corp.
|
| TMP86CP27AFG |
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 1.9 to 2.1; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: DO-35 8位微控制
|
Toshiba, Corp.
|
| TMP86CP23AUG |
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 1.8 to 2.0; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: DO-35 8位微控制
|
Toshiba, Corp.
|
| TA6038FNG |
Zener Diode; Application: Low noise; Pd (mW): 250; Vz (V): 2.8 to 3.2; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
|
Toshiba Corporation
|