| PART |
Description |
Maker |
| V23832-R111-M101 V23832-R311-M101 V23832-R511-M101 |
PAROLI 2 Tx AC, 1.6 Gbit/s
Parallel Optical Links (PAROLI) - PAROLI?2 Tx AC, 1.6 Gbit/s, multistandard electrical interface
Parallel Optical Links (PAROLI) - PAROLI?2 Rx AC, 1.6 Gbit/s,
PAROLI 2 Tx AC/ 2.7 Gbit/s
PAROLI 2 Tx AC/ 1.25 Gbit/s
PAROLI 2 Tx AC/ 1.6 Gbit/s
|
Infineon Technologies AG
|
| NAND08GW3B2AN1E NAND08GW3B2AN1F NAND04GW3B2AN1E NA |
4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories
|
STMICROELECTRONICS[STMicroelectronics]
|
| NAND01GR3B2BN1E NAND01GW3B2BN6E NAND01GW3B2BZA1E N |
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
| NAND08GW3B2A NAND04GW3B2AN1E NAND08GW3B2AN1E NAND0 |
4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories
|
Numonyx B.V
|
| NAND02GR3B2BZA1 NAND02GR4B2BZA6 NAND02GR3B2BZB1 NA |
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 1千兆千兆位，2112 Byte/1056字的页面.8V/3V，NAND闪存
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 1千兆千兆位，2112 Byte/1056字的页面1.8V/3V，NAND闪存
|
意法半导
STMicroelectronics N.V.
|
| HDMP-3268 |
HDMP-3268 · 3.2 GBit/sec 68 x 68 Digital Crosspoint Switch
3.2 Gbit/sec 68x68 Crosspoint Switch
|
Agilent (Hewlett-Packard)
Agilent(Hewlett-Packard)
|
| PM5390 2000181 |
10 Gbit/s Physical Layer Device for POS / ATM and Ethernet
10 Gbit/s Physical Layer Device for POS, ATM and Ethernet
From old datasheet system
|
PMC-Sierra, Inc
|
| HYB18T1G800AFL-5 HYB18T1G160AF HYB18T1G160AF-3 HYB |
1 Gbit DDR2 SDRAM
|
INFINEON[Infineon Technologies AG]
|
| FOA1252A1 |
2.5 Gbit/s Transimpedance Amplifier
|
INFINEON[Infineon Technologies AG]
|
| FOA1121A1 FOA1122A1 |
1.25 Gbit/s Transimpedance Amplifier
|
Infineon
|
| PM5372 |
40 Gbit/s Transport Switching Element
|
PMC-Sierra, Inc.
PMC[PMC-Sierra Inc]
|
| TH58NVG2S3BTG00 |
4-Gbit CMOS NAND EPROM
|
Toshiba
|
