| PART |
Description |
Maker |
| BFG10X_4 BFG10/X BFG10X95 BFG10/T1 BFG10X-2015 BFG |
TRANSISTOR NPN HF
From old datasheet system
NPN 2 GHz RF power transistor
|
http://
NXP Semiconductors
Philips
Quanzhou Jinmei Electro...
|
| PH3134-9L PTI3134-9L |
Radar Pulsed Power Transistor/ SW/ 300ms Pulse/ 10% Duty 3.1 - 3.4 GHz
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 1.1A I(C)
Radar Pulsed Power Transistor, 9W, 300us Pulse, 10% Duty 3.1 - 3.4 GHz
|
Tyco Electronics
|
| PH2731-75L PI-F2731-75L |
TRANSISTOR | BJT | NPN | 65V V(BR)CEO | 7A I(C) | FO-91VAR
Radar Pulsed Power Transistor, 75W, 300ms Pulse, 10% Duty 2.7 - 3.1 GHz
Radar Pulsed Power Transistor, 75W, 300us Pulse, 10% Duty 2.7 - 3.1 GHz
|
Tyco Electronics
|
| BFG10_X BFG10 BFG10/X |
NPN 2 GHz RF power transistor
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| TWT4805-15BI TWT1205-15BI TWT4805-15BZ TWT2405-15B |
COMPLEMENTARY SILICON POWER TRANSISTORS
High power NPN silicon transistor
Silicon NPN switching transistor
Silicon NPN transistor
PNP power transistor
Small signal NPN transistor
Medium power NPN silicon transistor
Dual npn-pnp complementary bipolar transistor
Complementary power transistors
NPN power transistors 模拟IC
Analog IC 模拟IC
|
RECOM Electronic GmbH
Vishay Intertechnology, Inc.
|
| MAPPST2933-190M |
S BAND, Si, NPN, RF POWER TRANSISTOR HERMETICALLY SEALED PACKAGE-4
Radar Pulsed Power Pallet 190W, 2.9-3.3 GHz
|
M/A-COM Technology Solutions, Inc.
|
| FCX688B FCX688BTA |
TRANSISTOR NPN 12V 3000MA SOT-89 3000 mA, 12 V, NPN, Si, SMALL SIGNAL TRANSISTOR
NPN SILICON POWER (SWITCHING) TRANSISTOR
|
Zetex Semiconductor PLC
Zetex Semiconductors
|
| BFG541 |
NPN 9 GHz wideband transistor
NPN 9GHz wideband transistor(NPN 9G赫兹 宽带晶体
|
NXP Semiconductors
Philips Semiconductors
|
| MJL4302A MJL4281A |
Complementary NPN-PNP Silicon Power Bipolar Transistors 15 A, 350 V, PNP, Si, POWER TRANSISTOR, TO-264AA
From old datasheet system
POWER TRANSISTOR, NPN
350V Audio Transistor, PNP
350V Audio Transistor, NPN
|
ON Semiconductor
ONSEMI
|
| MS3023 |
2.0 GHz, Class C, Common Base; fO (MHz): 0; P(out) (W): 3; P(in) (W): 0.5; Gain (dB): 7.8; Vcc (V): 28; Cob (pF): 9.5; Case Style: M210 L BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi, Corp.
|
| 2SD1060L-X-AB3-R 2SD1060L-X-T60-K 2SD1060L-X-T92-B |
NPN PLANAR SILICON TRANSISTOR
5 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-252
5 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-220AB
|
UNISONIC TECHNOLOGIES CO LTD
|
