| PART |
Description |
Maker |
| SST29EE020-120-4C-WH SST29LE020-250-4C-U2 SST29VE0 |
7.3728MHZ CRYSTAL -40/85''C
FLUKE-741B 120 REFURBISHED BY NEWARK
KJA 79C 79#22 PIN RECP
128Kx8 EEPROM
PSoC® Mixed-Signal Array
2 Mbit (256K x8) Page-Mode EEPROM 2兆位256K × 8）页模式的EEPROM
2 Mbit (256K x8) Page-Mode EEPROM 2兆位256K × 8）页模式EEPROM
DSUB 13X3 F PCR/A G 50OHM T 2兆位56K × 8）页模式的EEPROM
IC SMD AN2135SC CONTROLLER USB 256K X 8 EEPROM 5V, 120 ns, PDSO32
2 Mbit (256K x8) Page-Mode EEPROM 2兆位56K × 8）页模式的EEPROM
2 Mbit (256K x8) Page-Mode EEPROM 2兆位56K × 8）页模式EEPROM
|
Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
|
| M36DR232A M36DR232B M36DR232BZA M36DR232 M36DR232A |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product
32 MBIT (2MB X16, DUAL BANK, PAGE) FLASH MEMORY AND 2 MBIT (128K X16) SRAM, MULTIPLE MEMORY PRODUCT
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| V53C16126H V53C16126HK35 V53C16126HK60 V53C16126HT |
HIGH PERFORMANCE 128K X 16 BIT FAST PAGE MODE CMOS DYNAMIC RAM
DRAM|FAST PAGE|128KX16|CMOS|SOJ|40PIN|PLASTIC 内存|快速页面| 128KX16 |的CMOS | SOJ | 40PIN |塑料
High performance 128K x 16bit fast page mode CMOS dynamic RAM
|
Mosel Vitelic Corp
Mosel Vitelic Corp
Mosel Vitelic, Corp.
|
| IS41LV8200 IS41LV8200-50J IS41LV8200-50JI IS41LV82 |
5V 2M x 8(16-MBIT) dynamic RAM with edo page mode
2M x 8 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 2M X 8 EDO DRAM, 60 ns, PDSO28
|
Integrated Silicon Solution Inc
Integrated Silicon Solution, Inc.
|
| SST29LE010-120-3C-E SST29LE010-120-3C-EH SST29LE01 |
1 Megabit (128K x 8) Page Mode EEPROM
|
Silicon Storage Technology, Inc
|
| SST29EE01000 SST29LE010 SST29EE010-120-4C-NH SST29 |
1 Megabit (128K x8) Page-Mode EEPROM
|
Silicon Storage Technology, Inc
|
| E28F002BX-B80 E28F002BX-T60 E28F002BX-T80 E28F002B |
5V or Adjustable, Low-Voltage, Step-Up DC-DC Controller 28F200BX - B 2兆位28K的1656K × 8）启动块闪存系列
ACTUATOR, SWITCH, ROUND, LATCH; Approval Bodies:BEAB, VDE, UL, CSA; Diameter, external:29mm; IP rating:65; Operations, mechanical No. of:100000; Temp, op. max:85(degree C); Temp, op. min:-20(degree C) RoHS Compliant: Yes
28F002BX-B - 2-MBIT (128K x 16. 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
2-MBIT (128K x 16 / 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
2-MBIT (128K x 16/ 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
|
http://
Intel, Corp.
PROM
Intel Corp.
Intel Corporation
|
| 23C1611-10 23C1611-12 |
5 Volt 16-Mbit (2M x 8 / 1M x 16) Mask ROM with Page Mode
|
Macronix International Co., Ltd.
|
| IS41LV44002B IS41LV44002B-50JI IS41LV44002B-50JL I |
4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
|
Integrated Silicon Solution, Inc
|
| IS41C16100 IS41C16100-50K IS41C16100-50KI IS41C161 |
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
|
ISSI[Integrated Silicon Solution, Inc]
ISSI[Integrated Silicon Solution Inc]
|
| IS41LV4405X |
4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
|
Integrated Silicon Solution
|
