| PART |
Description |
Maker |
| UPD4264405G5-A50-7JD UPD4265405G5-A50-7JD UPD42S65 |
2-Mbit (128K x 18) Flow-Through SRAM with NoBL™ Architecture
x4 EDO Page Mode DRAM
512K (32K x 16) Static RAM
36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
128K x 8 Static RAM 128K的8静态RAM
|
Omron Electronics, LLC
|
| IS41LV8205-50J IS41LV8205-50JI IS41LV8205-60JI IS4 |
2M x 8 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE 2M X 8 FAST PAGE DRAM, 60 ns, PDSO28
|
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
|
| IS41LV16100A-60TI IS41LV16100A-60K IS41LV16100A-50 |
RES 0805 1/8W 5% 2.4K 1M X 16 EDO DRAM, 60 ns, PDSO44
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 16 EDO DRAM, 60 ns, PDSO42
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 16 EDO DRAM, 50 ns, PDSO42
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 16 EDO DRAM, 60 ns, PDSO44
|
Integrated Silicon Solution, Inc.
|
| IS45LV44002B-50JA1 IS45LV44002B-50JLA1 |
4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
|
Integrated Silicon Solution, Inc.
INTEGRATED SILICON SOLUTION INC
|
| MX23C3211 MX23C3211MC-10 MX23C3211MC-12 MX23C3211R |
5 Volt 32-Mbit (4M x 8 / 2M x 16) Mask ROM with Page Mode
|
MCNIX[Macronix International]
|
| IC41LV16100A IC41LV16100A-50K IC41LV16100A-50T IC4 |
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
|
Integrated Circuit Solution Inc
|
| IS41LV44052 IS41LV44052-50JI IS41LV44052-60J IS41L |
4M x 4 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
|
ISSI[Integrated Silicon Solution, Inc]
|
| IS41LV44002B IS41LV44002B-50JI IS41LV44002B-50JL I |
4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
|
Integrated Silicon Solution, Inc
|
| IC41C16100S IC41LV16100S IC41C16100S-50K IC41C1610 |
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
|
ICSI[Integrated Circuit Solution Inc]
|
| IS41LV16100B IS41LV16100B-50KI IS41LV16100B-50KL I |
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
|
ISSI[Integrated Silicon Solution, Inc]
|
