| PART |
Description |
Maker |
| 2SC1729 SC1729 |
NPN EPITAXIAL PLANAR TYPE(RF power amplifiers on VHF band mobile radio)
From old datasheet system
NPN EPITAXAIL PLANAR TYPE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| RN5006 |
Transistor Silicon NPN Epitaxial Type (PCT Process) Motor Drive Circuit Applications Power Amplifier Applications Power Switching Applications
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
|
Toshiba Semiconductor
|
| MP4304 |
Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1)
|
Toshiba Semiconductor
Toshiba Corporation
|
| 2SD1280 |
SILICON NPN EPITAXIAL PLANER TYPE(FOR LOW-VOLTAGE TYPE MEDIUM OUTPUT POWER AMPLIFICATION)
|
Panasonic Semiconductor
|
| 2SC5505 |
Power Device - Power Transistors - General-Purpose power amplification
Silicon NPN epitaxial planar type
|
Panasonic Semiconductor
|
| MT3S03AU |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
|
Toshiba Semiconductor
|
| 2SC3422 E000844 |
NPN EPITAXIAL TYPE (AUDIO FREQUENCY POWER AMPLIFIER/ LOW SPEED SWITCHING)
NPN EPITAXIAL TYPE (AUDIO FREQUENCY POWER AMPLIFIER, LOW SPEED SWITCHING)
From old datasheet system
|
Toshiba Semiconductor
|
| 2SC3019 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE
|
Mitsubishi Electric Corporation
|
| 2SC2133 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE
|
Mitsubishi Electric Corporation
|
| 2SC3018 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE
|
Mitsubishi Electric Corporation
|
| 2SC2538 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE
|
Mitsubishi Electric Corporation
|
