| PART |
Description |
Maker |
| X2816AM |
2048 x 8-Bit / Electrically EPROM
ELECTRICALLY ERASABLE PROM
|
Xicor Inc.
|
| M5M51016BRT-10VL-I M5M51016BRT-10VLL-I M5M51016BTP |
From old datasheet system
1048576-BIT CMOS STATICRAM
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
1048576-bit (65536-word by 16-bit) CMOS static RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| TC531024F-12 TC531024F-15 TC531024P-12 TC531024P-1 |
1M BIT (65536 WORD X 16 BIT) CMOS MASK ROM
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| MB81416 |
NMOS 65536 Bit DRAM
|
Fujitsu Microelectronics
|
| UPD27C512 |
65536 x 8-Bit CMOS UV EPROM
|
NEC Electronics
|
| MN4264 |
65536 Bit NMOS Dynamic RAM
|
Matsushita
|
| HN27C1024HCC |
65536-word x 16-bit CMOS UV Erasable and Programmable ROM
|
Renesas Technology / Hitachi Semiconductor
|
| M5M51016BRT-12VL M5M51016BRT-12VLL M5M51016BTP-12V |
Octal D-Type Transparent Latches With 3-State Outputs 20-TSSOP -40 to 85
From old datasheet system
1048576-BIT CMOS STATICRAM
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| BR24L01AF-W BR24L01AFV-W BR24L01AFVM-W BR24L01 BR2 |
1288 bit electrically erasable PROM
128】8 bit electrically erasable PROM
|
ROHM[Rohm]
|
| CXK5B16120J CXK5B16120J-12 CXK5B16120TM-12 |
65536-word X 16-bit High Speed Bi-CMOS Static RAM
|
SONY[Sony Corporation]
|
| 24LC02BTI_SNG 24LC02BI_SNG 24LC02BI_OTG 24LC02BI_P |
The 24AA02 is a 1K bit Electrically Erasable PROM memory organized as a single block of 256 x 8-bit memory with an I2C™ ...
The 24AA02 is a 1K bit Electrically Erasable PROM memory organized as a single block of 256 x 8-bit memory with an I2C™ compatible 2-wire serial interface bus. The 24AA02 features hardware write protect, Schmitt trigger inp
2K I2C Serial EEPROM
|
MICROCHIP[Microchip Technology]
|
