| PART |
Description |
Maker |
| TPCP8402 |
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
|
TOSHIBA[Toshiba Semiconductor]
|
| SSM6E01TU |
Multi-Chip Device Silicon P-Channel MOS Type (U-MOS II) N-Channel MOS Type (Planer) Load Switch Applications
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SK1959 2SK1959-T1 |
N Channel enhancement MOS FET
MOS Field Effect Transistor
N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|
| UPG2163T5N-E2-A UPG2163T5N-09 |
GaAs Integrated Circui Broadband SPDT Switch for Dual-Band Wireless LAN
|
Renesas Electronics Corporation
California Eastern Labs
|
| TPCS8205 TPC8205 |
Field Effect Transistor Silicon N Channel MOS Type (U-MOS II) Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II)
|
TOSHIBA[Toshiba Semiconductor]
|
| UPD720110 UPD720110AGC-8EA |
MOS INTEGRATED CIRCUIT
|
NEC[NEC]
|
| UPD703130GC-8EU UPD703130 |
MOS INTEGRATED CIRCUIT
|
NEC[NEC]
|
| UPD166021T1F UPD166021T1F-E1-AY |
MOS INTEGRATED CIRCUIT
|
Renesas Electronics Corporation
|
| UPD703130GC-8EU |
MOS INTEGRATED CIRCUIT
|
NEC Corp.
|
| UPD99911 |
MOS INTEGRATED CIRCUIT
|
NEC
|
