PART |
Description |
Maker |
SPP80N10L SPB80N10L SPI80N10L |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=14mOhm, 80A, LL Low Voltage MOSFETs - Power MOSFET, 100V, DPAK, RDSon=14mOhm, 80A, LL Low Voltage MOSFETs - Power MOSFET, 100V, TO-262, RDSon=14mOhm, 80A, LL SIPMOS Power-Transistor
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INFINEON[Infineon Technologies AG]
|
IXFX38N80Q2 IXFK38N80Q2 IXFN38N80Q2 |
Discrete MOSFETs: HiPerFET Power MOSFETS N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Q Low intrinsic R
|
IXYS[IXYS Corporation]
|
APT5014BLL APT5014SLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS 电源MOS 7TM是一个低损耗,高电压,N沟道增强模式的新一代功率MOSFET Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS 7 500V 35A 0.140 Ohm
|
Advanced Power Technology, Ltd.
|
KMA3D6N20SA |
Low Voltage MOSFETs
|
Korea Electronics (KEC)
|
KMD7D5P40QA |
Low Voltage MOSFETs
|
Korea Electronics (KEC)
|
KMD6D0DN40Q |
Low Voltage MOSFETs
|
Korea Electronics (KEC)
|
APT5018BFLL APT5018SFLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS 电源MOS 7TM是一个低损耗,高电压,N沟道增强模式的新一代功率MOSFET Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS POWER MOS 7 500V 27A 0.180 Ohm
|
Advanced Power Technology, Ltd.
|
SPU09P06PL |
Low Voltage MOSFETs - Power MOSFET, -60V, I-PAK RDSon = 0.25
|
Infineon
|
SPB160N04S2L-03 |
Low Voltage MOSFETs - TO263;160A;LL OptiMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
FS50SMJ-3 |
Power MOSFETs: FS Series, Low Voltage, 150V for High-Speed Switching Use
|
Mitsubishi Electric Corporation
|
BSS84P |
Low Voltage MOSFETs - Small Signal MOSFET, -60V, SOT-23, RDSon = 8
|
Infineon
|
SPD25N06S2-40 |
Low Voltage MOSFETs - DPAK; 25 A; 55V; NL; 40mOhm OptiMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|