| PART |
Description |
Maker |
| MJ21194 MJ21193 ON1989 MJ2194 |
16 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-204AA
From old datasheet system
16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS 250 WATTS
|
MOTOROLA INC
ON Semiconductor
Motorola, Inc
|
| MJD47 MJD47T4 MJD50 ON2006 MJD50-1 MJD50T4 MJD47-1 |
NPN SILICON POWER TRANSISTORS 1 AMPERE 250 / 400 VOLTS 15 WATTS
NPN SILICON POWER TRANSISTORS 1 AMPERE 250, 400 VOLTS 15 WATTS 1 A, 400 V, NPN, Si, POWER TRANSISTOR
From old datasheet system
NPN SILICON POWER TRANSISTORS 1 AMPERE 250 400 VOLTS 15 WATTS
DPAK For Surface Mount Applications
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
ON Semiconductor
|
| SF_BLY49 BLY49 BLY49.MOD |
3 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-213AA
Bipolar NPN Device in a Hermetically sealed TO66 Metal Package
|
SEMELAB LTD
SEME-LAB[Seme LAB]
|
| C2688BPL CSC2688 CSC2688BPL CSC2688G CSC2688O CSC2 |
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 200.000A Ic, 40 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 40 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 160 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 60 - 120 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 40 - 80 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 100 - 200 hFE.
|
Continental Device India Limited
|
| BFY50L |
Bipolar NPN Device in a Hermetically sealed TO5
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
|
Seme LAB
|
| BFT25_CNV_2 BFT25/T1 BFT25-15 BFT25-2015 |
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
From old datasheet system
NPN 2 GHz wideband transistor
|
Quanzhou Jinmei Electro...
|
| MJ10023 MJ10023_D ON1973 |
From old datasheet system
40 AMPERE NPN SILICON POWER DARLINGTON TRANSISTOR 400 VOLTS 250 WATTS
|
ONSEMI[ON Semiconductor]
|
| D44T8 D44T2 D44T3 D44T1 D44T4 D44T5 D44T6 D44T7 |
POWER TRANSISTORS(2.0A,250-300V,31W) 功率晶体管（2.0安培,250 - 300V1宽）
|
Mospec Semiconductor, Corp.
|
| 2N6339 2N6341 2N6340 ON0084 |
100, 120, 140, 150 VOLTS 250 WATTS
POWER TRANSISTORS NPN SILICON
From old datasheet system
|
ON Semiconductor
|
| MTP9N25E MTP9N25 MTP9N25E-D |
TMOS POWER FET 9.0 AMPERES 250 VOLTS RDS(on) = 0.45 OHM 9 A, 250 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
