| PART |
Description |
Maker |
| AD70402 AD704AN AD704 AD704JR-_REEL AD704TQ_883B A |
-18V; quad picoampere inout current bipolar Op Amp. For industrial/process controls, weigh scales
Quad Picoampere Input Current Bipolar Op Amp
OP-AMP|QUAD|BIPOLAR|SOP|16PIN|PLASTIC
|
Analog Devices
|
| ZTX601A ZTX600Z ZTX600AZ ZTX600BZ ZTX601B |
Discrete - Bipolar Transistors - Darlington Transistors - ZTX600B(Z)
Discrete - Bipolar Transistors - Darlington Transistors - ZTX600A(Z)
Discrete - Bipolar Transistors - Darlington Transistors - ZTX600(Z)
NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS
|
Diodes
List of Unclassifed Manufacturers
|
| MAX1156-MAX1174 MAX1174ACUP MAX1174AEUP MAX1174BCU |
14-Bit 135ksps Single-Supply ADCs with Bipolar Analog Input Range
14-Bit / 135ksps / Single-Supply ADCs with Bipolar Analog Input Range
"14-Bit, 135ksps, Single-Supply ADCs with Bipolar Analog Input Range"
1300/8000 Series Lucent STII Fiber Die
14-Bit, 135ksps, Single-Supply ADCs with Bipolar Analog Input Range 1-CH 14-BIT SUCCESSIVE APPROXIMATION ADC, PARALLEL ACCESS, PDSO20
14-Bit.135ksps.Single-Supply ADCs with Bipolar Analog Input Range
|
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
|
| MJD18002D2-D |
Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-In Efficient Antisaturation Network
|
ON Semiconductor
|
| BUD43D2 BUD43D2-1 BUD43D2-D |
Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability
|
ON Semiconductor
|
| MMJT9410T1 MMJT9410-D |
NPN Bipolar Power Transistor
Bipolar Power Transistors NPN Silicon
|
ON Semiconductor
|
| AM27S29 AM27S29ADC AM27S29AJC AM27S29A AM27S29SA A |
4096 Bit Bipolar PROM
4,096-Bit (512x8) Bipolar PROM
|
http://
AMD[Advanced Micro Devices]
|
| 2SA2092TLQ 2SA209211 |
-1A / -60V Bipolar transistor
-1A /-60V Bipolar transistor Low switching noise.
|
Rohm
|
| CA329004 CA3290E CA3290 CA3290A CA3290AE |
Comparator, BiMOS, Dual, MOSFET Inputs, Bipolar Outputs, Improved Input Characteristics
BiMOS Dual Voltage Comparators with MOSFET Input, Bipolar Output
|
INTERSIL[Intersil Corporation]
|
| TLE4945 TLE4945-2L TLE4945L TLE4905 TLE4905L TLE49 |
Uni- and Bipolar Hall IC Switches for Magnetic Field Applications
Hall Sensors - Unipolar Hall IC switch (P-SSO-3-2 package)
Hall Sensors - Bipolar Hall IC switch (P-SSO-3-2 package)
Hall Sensors - Bipolar Hall IC latch (P-SSO-3-2 package)
Bipolar Hall IC Switches for Magnetic Field Applications(用于磁场应用的双极霍尔芯片开
|
INFINEON[Infineon Technologies AG]
Infineon Technologies A...
|
| TA31142FN TA31142F |
IF AMPLIFIER,BIPOLAR,SSOP,20PIN,PLASTIC
IF AMPLIFIER,BIPOLAR,SOP,20PIN,PLASTIC
From old datasheet system
|
Toshiba America Electronic Components, Inc.
|
| 30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
|
MDE Semiconductor
|
