| PART |
Description |
Maker |
| BFC40 |
NCHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS
N?CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| STP80N03L-06 4881 |
N-Channel Enhancement Mode "Ultra High Density" Power MOS Transistor(Ｎ沟道增强模式高密度功率ＭＯＳ晶体管) N沟道增强模式“超高密度”功率MOS晶体管（不适用沟道增强模式高密度功率马鞍山晶体管）
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
From old datasheet system
N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
|
STMicroelectronics N.V.
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| APL501P |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 500V 43.0A 0.12 OHM
|
Advanced Power Technolo...
Advanced Power Technology
|
| SML100W18 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:1000V,Id(cont):17.3A,Rds(on):0.57Ω)(N沟道增强高电压功率MOS场效应管(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω))
|
SemeLAB
SEME-LAB[Seme LAB]
|
| 3VD045060JL |
Nchannel MOSFET CHIPS
|
Silan Microelectronics Joint-stock
|
| SVD5N60AF SVD5N60AT |
5A, 600V NCHANNEL MOSFET
|
Silan Microelectronics Joint-stock
|
| STP80N06-1 STP80N06-10 4888 |
From old datasheet system
N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| G2N7000 |
The G2N7000 is designed for high voltage, high speed applications such as switching regulators, converters solenoid and relay drivers.
N-CHANNEL ENHANCEMENT MODE MOSFET
|
E-Tech Electronics LTD
GTM CORPORATION
|
| NTE2905 |
P?Ch, Enhancement Mode High Speed Switch
|
NTE Electronics
|
| NTE2399 NTE2395 |
MOSFET N-Ch, Enhancement Mode High Speed Switch
|
NTE[NTE Electronics]
|
| NTE66 |
MOSFET N-Ch, Enhancement Mode High Speed Switch
|
NTE Electronics, Inc.
NTE[NTE Electronics]
|
