| PART |
Description |
Maker |
| 2SK1984-01MR |
N-channel MOS-FET 3 A, 900 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| FQPF9N90C FQPF9N90CT FQP9N90C |
N-Channel QFETMOSFET 900V, 8A, 1.4
N-Channel QFET MOSFET 900 V, 8.0 A, 1.4 Ohm
|
Fairchild Semiconductor
|
| IPW90R120C3 |
36 A, 900 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
INFINEON TECHNOLOGIES AG
|
| IXCY01N90E |
900 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA PLASTIC PACKAGE-3
|
IXYS, Corp.
|
| STW11NK90Z |
N-channel 900 V, 0.82 Ohm typ., 9.2 A Zener-protected SuperMESH(TM) Power MOSFET in a TO-247 package
|
ST Microelectronics
|
| 9N90L-T47-T 9N90G-T47-T 9N90G-T3P-T 9N90L-T3P-T 9N |
900V N-CHANNEL MOSFET
9 A, 900 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET
|
UNISONIC TECHNOLOGIES CO LTD
|
| FQPF2N90 |
900V N-Channel MOSFET 1.4 A, 900 V, 7.2 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| 2SK2487 2SK2487-A |
8 A, 900 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET
MOS Field Effect Transistor
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
| IXFH16N90 |
HiPerFET Power MOSFETs 16 A, 900 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
IXYS, Corp.
|
| APT64GA90LD30 |
Insulated Gate Bipolar Transistor - Power MOS 8; Package: TO-264; BV(CES) (V): 900; VCE(sat) (V): 3.1; IC (A): 64; 117 A, 900 V, N-CHANNEL IGBT, TO-264AA
|
Microsemi, Corp.
|
| IXFM13N90 IXFH10N90 IXYSCORP-IXFT13N90 |
N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电00V,导通电.1Ω的N沟道增强HiPerFET功率MOSFET) 10 A, 900 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
HiPerFET Power MOSFETs
|
IXYS, Corp.
ETC
IXYS Corporation
|
| FMH06N90E |
N-CHANNEL SILICON POWER MOSFET
6 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET
|
FUJI ELECTRIC CO LTD
|
|
