| PART |
Description |
Maker |
| NE722S01 NE722S01-T1 |
NECs C TO X BAND N-CHANNEL GaAs MES FET
|
California Eastern Labs
|
| UPG2214TB-E4-A |
50 MHz - 3000 MHz RF/MICROWAVE SGL POLE DOUBLE THROW SWITCH, 0.65 dB INSERTION LOSS
2-WIRE FACTORY PROGRAMMED W/TIN PLATING
NECs W LOW VOLTAGE L/ S-BAND SPDT SWITCH
NECs ?W LOW VOLTAGE L, S-BAND SPDT SWITCH
|
NEC Corp.
|
| UPG2227T5F-E2-A UPG2227T5F |
NECs L-BAND SP3T SWITCH
|
CEL[California Eastern Labs]
|
| UPG2009TB UPG2009TB-E3 |
NECs L S-BAND 4W SPDT SWITCH
NECs L, S-BAND 4W SPDT SWITCH
NECs L/ S-BAND 4W SPDT SWITCH
|
NEC Corp.
NEC[NEC]
|
| NE5511279A NE5511279A-T1A NE5511279A-T1 |
NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET
NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET 邻舍7.5 V UHF频段射频功率硅劳工处场效应晶体管
|
NEC[NEC]
NEC Corp.
NEC, Corp.
|
| NE552R479A-T1A-A |
NECs 3.0 V, 0.25 W L&S-BAND MEDIUM POWER SILICON LD-MOSFET
|
California Eastern Laboratories
|
| NE3503M04-T2-A NE3503M04-A |
PC 3C 3#16 PIN RECP
NECs C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNER HJ-FET 邻舍C至超级Ku波段低噪声和高增益放大器 - CHANNER黄建忠场效应
|
California Eastern Laboratories, Inc.
|
| TLP751 |
Photocoupler GaA .As Ired Photo IC
GaA?As Ired Photo IC
|
Toshiba Semiconductor
|
| NE55410GR-T3-AZ |
2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
Renesas Electronics Corporation
|
| UPD30100GC-40-9EU |
Transmitter; Package: PG-TSSOP-16; Frequency Band: 434.0 MHz 868.0 MHz; Channel Requirements per Band: Single Channel; Modulation Type: ASK / FSK; Transmit Power (at 3V): 10.0 dBm; Temperature Range: -40.0 - 125.0 °C 64位微处理
|
Ecliptek, Corp.
|
| TLP2451 |
Photocoupler GaA??s IRED Photo IC
|
Toshiba Semiconductor
|
| UPG2010TB UPG2010TB-E3 |
High power single control L-band SPDT switch.
NEC’s HIGH POWER SINGLE CONTROL L-BAND SPDT SWITCH
NECs HIGH POWER SINGLE CONTROL L-BAND SPDT SWITCH
|
NEC
ETC
California Eastern Laboratories
|
