| PART |
Description |
Maker |
| MT46V32M16P-5BJ |
Double Data Rate (DDR) SDRAM MT46V128M4 ?32 Meg x 4 x 4 banks MT46V64M8 ?16 Meg x 8 x 4 banks MT46V32M16 ?8 Meg x 16 x 4 banks
|
Micron Technology
|
| IDT71T024L200PZI IDT71T024 IDT71T024L150PZ IDT71T0 |
LOW POWER 2V CMOS SRAM 1 MEG (128K x 8-BIT) 128K X 8 STANDARD SRAM, 150 ns, PDSO32
|
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
| MT41J64M16JT MT41J128M8 MT41J256M4 MT41J64M16JT-12 |
DDR3 SDRAM MT41J256M4 ?32 Meg x 4 x 8 banks MT41J128M8 ?16 Meg x 8 x 8 banks MT41J64M16 ?8 Meg x 16 x 8 banks
|
Micron Technology
|
| IDT71L016L70PHI IDT71L016 IDT71L016L100PH IDT71L01 |
LOW POWER 3V CMOS SRAM 1 MEG (64K x 16-BIT)
|
IDT[Integrated Device Technology]
|
| MT8D132M-XXX MT16D232M-XXX MT16D232-6X MT8D132-7X |
1 MEG, 2 MEG x 32 DRAM MODULES 1乙二醇，二乙二醇× 32 DRAM模块
|
Micron Technology, Inc.
|
| MT48H32M16LFCJ-8L MT48H16M32LFCJ-8LIT MT48H16M32LG |
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
|
Micron Technology, Inc.
|
| MT48H32M16LFCM-8L |
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
|
Micron Technology
|
| MT28F160S3 |
2 Meg x 8/1 Meg x 16 Smart 3 Flash(2 M x 8/1 M x 16闪速存储器)
|
Micron Technology, Inc.
|
| 907-0010 912-0120 914-0040 914-0070 914-0140 912-0 |
PUNCH&DIE SET 3-12MM
PUNCH&DIE 10.0MM CIRCULAR
PUNCH&DIE 16.5MM CIRCULAR
PUNCH&DIE 25.0MM CIRCULAR
PUNCH&DIE 12.0MM CIRCULAR
PUNCH&DIE 9.0MM CIRCULAR
PUNCH&DIE 20.0MM CIRCULAR
PUNCH&DIE 12.5MM CIRCULAR
STRIPPER 37.0 X 13.7 D CON
STRIPPER 31.75MM DIAMETER 低产31.75MM直径
LOUVRE TOOL 卢浮宫工
PUNCH&DIE 10.0MM CIRCULAR
STRIPPER 67.2 X 16.5 D CON
|
Peregrine Semiconductor, Corp.
Molex, Inc.
|
| K7J641882M K7J643682M K7J641882M-FC16 K7J641882M-F |
72Mb M-die DDRII SRAM Specification 72Mb的M -模条DDRII规格的SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
