| PART |
Description |
Maker |
| K6F2008T2E-YF55 K6F2008T2E-YF70 K6F2008T2E K6F2008 |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| N02L83W2A |
2Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx8 bit
|
ON Semiconductor
|
| N02M0818L2 N02M0818L2A N02M0818L2AN-85I N02M0818L2 |
2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx8 bit
|
NANOAMP[NanoAmp Solutions, Inc.]
|
| 29F200C-55 29F200C-90 29F200C-70 |
2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY 200万位[256Kx8/128Kx16]的CMOS闪存
|
Macronix International Co., Ltd.
|
| HY62LF16404C |
Super Low Power Slow SRAM - 4Mb
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
Hynix Semiconductor
|
| MX27C2048PC-55 MX27C2048PC-90 MX27C2048QC-55 MX27C |
2M-BIT [256Kx8/128x16] CMOS EPROM 128K X 16 OTPROM, 55 ns, PDIP40
2M-BIT [256Kx8/128x16] CMOS EPROM 128K X 16 OTPROM, 90 ns, PDIP40
2M-BIT [256Kx8/128x16] CMOS EPROM 128K X 16 OTPROM, 55 ns, PQCC44
2M-BIT [256Kx8/128x16] CMOS EPROM 128K X 16 OTPROM, 70 ns, PQCC44
2M-BIT [256Kx8/128x16] CMOS EPROM 128K X 16 OTPROM, 90 ns, PDSO40
2M-BIT [256Kx8/128x16] CMOS EPROM 128K X 16 OTPROM, 150 ns, PQCC44
2M-BIT [256Kx8/128x16] CMOS EPROM 128K X 16 OTPROM, 150 ns, PDSO40
|
Macronix International Co., Ltd.
MACRONIX INTERNATIONAL CO LTD
|
| FMP3217BAX-FXXX FMP3217BAX-GXXX FMP3217BAX-H60E FM |
2M x 16 bit Super Low Power and Low Voltage Full CMOS RAM
|
FIDELIX
|
| FMP1617DAX |
1M x 16 bit Super Low Power and Low Voltage Full CMOS RAM
|
FIDELIX
|
| FMP1617DCX |
1M x 16 bit Super Low Power and Low Voltage Full CMOS RAM
|
FIDELIX
|
| FAMP0417CAX-W70E |
256K x 16 bit Super Low Power and Low Voltage Full CMOS RAM
|
FIDELIX
|
| CMP0817BA8-F70I CMP0817BA8-I |
512K x 16 bit Super Low Power and Low Voltage Full CMOS RAM
|
FIDELIX
|
