| PART |
Description |
Maker |
| IRFP470 |
N-Channel Enhancement Mode MegaMOS FET
|
IXYS[IXYS Corporation]
ETC
|
| IXTH10N100 IXTH12N100 IXTM12N100 |
Discrete MOSFETs: Standard N-channel Types
MEGAMOS FET
|
IXYS Corporation
|
| IXTM20N60 IXTH20N60 |
MegaMOS FET
Discrete MOSFETs: Standard N-channel Types
|
IXYS Corporation
|
| MTV10N100E |
TMOS POWER FET 10 AMPERES 1000 VOLTS RDS(on) = 1.3 OHM
|
Motorola, Inc
|
| MTW6N100E MTW6N100E_D ON2701 MTW6N100 |
From old datasheet system
TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS(on) = 1.5 OHM
|
MOTOROLA[Motorola, Inc]
ON Semi
|
| AD645 AD645S AD645JN AD645SH/883B AD645A |
Low Noise,Low Drift FET OP AMP(低噪低漂FET运算放大
Low Noise, Low Drift FET Op Amp OP-AMP, 1000 uV OFFSET-MAX, 2 MHz BAND WIDTH, PDIP8
|
Analog Devices, Inc.
|
| AD381SH AD381SH_883B AD381 AD382 AD380SH_883B AD38 |
(AD380 / AD382) High Speed / Low Drift FET Operational Amplifier
8-Channel 14-Bit Single-Supply Voltage-Output DAC; Package: LFCSP (9x9mm, 7.10 exposed pad); No of Pins: 64; Temperature Range: Industrial
High Speed, Low Drift FET Operational Amplifier OP-AMP, 1000 uV OFFSET-MAX, BCY12
|
AD[Analog Devices]
Analog Devices, Inc.
|
| 2SK3337-01 |
N-CHANNEL SILICON POWER MOS-FET 7 A, 1000 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
FUJI ELECTRIC CO LTD
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| R76QD1100SE40J |
Capacitor, film, 1000 pF, /-5% Tol, -55/ 105C, General Purpose, 1000 VDC@85C, Lead Spacing=7.5 mm
|
Kemet Corporation
|
| 05110G0F 05110GOF |
Silicon Controlled Rectifier; Package: TO-65; IT (Av) (A): 50; VTM (V): 2.5; IH (mA): 200; VGT (V): 3; IGT (µA): 100000; Vrrm (V): 1000; 80 A, 1000 V, SCR, TO-208AC
|
Microsemi Corporation
Microsemi, Corp.
|
| T82F096562DN T82F056562DN F036542DN F0365B2DN |
1000 A, 900 V, SCR
1000 A, 500 V, SCR
1000 A, 300 V, SCR
|
POWEREX INC
|
| 1N4942GP11 1N4948GP-AP |
1 Amp Glass Passivated Fast Recovery Rectifier 200 - 1000 Volts
1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41 ROHS COMPLIANT, PLASTIC PACKAGE-2
|
Micro Commercial Components, Corp.
|
