| PART |
Description |
Maker |
| DIM200PHM33-F000 |
Half Bridge IGBT Module 200 A, 3300 V, N-CHANNEL IGBT
|
DYNEX SEMICONDUCTOR LTD
Dynex Semiconductor, Ltd.
|
| C67070-A2710-A67 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| CM100DY24H |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 100A I(C) 晶体管| IGBT功率模块|半桥| 1.2KV五（巴西）国际消费电子展| 100号A一（c
|
Toshiba, Corp.
|
| DIM400PHM17-A000-15 |
IGBT Half Bridge Module
|
Dynex Semiconductor
|
| SIM75D06AV1 |
“HALF-BRIDGE IGBT MODULE
|
SemiWell Semiconductor
|
| SIM200D12SV3 |
HALF-BRIDGE IGBT MODULE
|
SemiWell Semiconductor
|
| SIM300D06AV3 |
“HALF-BRIDGE IGBT MODULE
“HALF-BRIDGE” IGBT MODULE
|
SemiWell Semiconductor
|
| GP200MHS12 |
Half Bridge IGBT Module
|
DYNEX[Dynex Semiconductor]
|
| C67070-A2704-A67 BSM150GB170DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| BSM150GB120DN2E3166 150B12E2 C67076-A2112-A70 |
From old datasheet system
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area)
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| C67070-A2702-A67 BSM75GB170DN2 075B17N2 |
From old datasheet system
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
