| PART |
Description |
Maker |
| BFY280 BFY280H |
From old datasheet system
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor)
|
Infineon
Siemens Semiconductor Group
|
| BFY180 |
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0.2 to 2.5 mA)
|
Siemens Semiconductor G...
|
| BFY183 |
HiRel NPN Silicon RF Transistor
|
Infineon Technologies A...
|
| BFY181 BFY181ES BFY181H BFY181P BFY181S |
HiRel NPN Silicon RF Transistor
|
Infineon Technologies AG
|
| BFY180H BFY180P BFY180 BFY180ES BFY180S |
HiRel NPN Silicon RF Transistor
|
Infineon Technologies AG
|
| BFY450P BFY450 BFY450ES BFY450H BFY450S |
HiRel NPN Silicon RF Transistor
|
INFINEON[Infineon Technologies AG]
|
| AOD421 |
P-Channel Enhancement Mode Field Effect Transisto
|
Alpha & Omega Semiconductors
|
| 6507A MX6507A |
0.3 A, 8 ELEMENT, SILICON, SIGNAL DIODE
Isolated Diode Array with HiRel MQ, MX, MV, and SP Screening Options
|
MICROSEMI CORP-SCOTTSDALE
MICROSEMI[Microsemi Corporation]
|
| 6506A SP6506A |
0.3 A, 8 ELEMENT, SILICON, SIGNAL DIODE
Isolated Diode Array with HiRel MQ, MX, MV, and SP Screening Options
|
MICROSEMI CORP-SCOTTSDALE
MICROSEMI[Microsemi Corporation]
|
