| PART |
Description |
Maker |
| V07 V07E |
CONTROLLED AVALANCHE DIODE
|
Hitachi
|
| BAS31 |
0.25 A, 110 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB
Dual In-Series General-Purpose Controlled-Avalanche Diode
|
VISHAY SEMICONDUCTORS
|
| NTE570 |
Silicon Controlled Avalanche Diode
|
NTE[NTE Electronics]
|
| DS2-12A DSA2-16A DSA2-12A DSA2-18A DS2-08A |
Rectifier Diode Avalanche Diode
Discrete Rectifier Diodes
Rectifier Diode Avalanche Diode 3.6 A, 1800 V, SILICON, RECTIFIER DIODE
Rectifier Diode Avalanche Diode 3.6 A, 1600 V, SILICON, RECTIFIER DIODE
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| STA475A06 STA475A |
Sink Driver Array With Built-in Avalanche Diode
NPN Darlington With built-in avalanche diode
|
Sanken electric
|
| STA413A06 STA413A |
Sink Driver Array With Built-in Avalanche Diode
NPN With built-in avalanche diode
|
Sanken electric
|
| BAX12A |
CONTROLLED AVALANCHE DIODES
|
SUNMATE electronic Co.,...
|
| BAS12 BAS11 |
Controlled avalanche rectifiers
|
Philips
NXP Semiconductors
http://
|
| S1B S1K S1A S1G S1D S1M S1 S1J |
SMA controlled avalanche rectifiers
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BYX25 |
Controlled Avalanche Rectifier Diodes
|
NXP
|
| BYM56SERIES BYM56_1 BYM56E BYM56 BYM56A BYM56B BYM |
Controlled avalanche rectifiers
From old datasheet system
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BAS35 BAS31 |
General Purpose Controlled Avalanche Diodes
|
Guangdong Kexin Industrial Co.,Ltd
|
