| PART |
Description |
Maker |
| 2N5555 ON0063 |
CASE 29.04, STYLE 5 TO-92 (TO-226AA)
CASE 29-4, STYLE 5TO-2 (TO-26AA)
From old datasheet system
JFET Switching
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MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
|
| DTC114YE DTC114YE_D ON0281 |
CASE 463-01/ STYLE 1 SOT-416/SC-90
CASE 463-01, STYLE 1 SOT-416/SC-90
CASE 463-1, STYLE 1 SOT-16/SC-0
From old datasheet system
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Motorola Inc
ON Semi
MOTOROLA[Motorola, Inc]
|
| BC847ALT1 BC847BLT1 BC847CLT1 BC848BLT1 BC850CLT1 |
CASE 318-08 STYLE 6 SOT-23 (TO-236AB)
CASE 318-08, STYLE 6 SOT-23 (TO-236AB)
CASE 318-08/ STYLE 6 SOT-23 (TO-236AB)
CIR 4C 4#0 FR PIN PLUG
High Speed CMOS Logic Triple 3-Input NOR Gates 14-PDIP -55 to 125 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
NPN Silicon General Purpose Transistors NPN硅通用晶体
High Speed CMOS Logic Dual Monostable Multivibrators with Reset 16-SOIC -55 to 125 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
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MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
Motorola Inc
Motorola, Inc.
Motorola Mobility Holdings, Inc.
|
| ST26C32A ST26C32ABD ST26C32ABDR ST26C32ABN ST26C32 |
FPGA, FLEX 10KE, 30K GATES, PQFP208; Logic IC family:FPGA; Logic IC Base Number:10; Logic IC function:EPF10K30E; Voltage, supply:2.5V; Case style
MOSFET, N, SO-8; Transistor type:MOSFET; Current, Id cont:3.2A; Resistance, Rds on:5R; Voltage, Vgs Rds on measurement:10V; Case style:SO-8 PowerPak
CMOS QUAD 3-STATE DIFFERENTIAL LINE RECEIVER
|
意法半导
STMicroelectronics
|
| X9315 X9315WSZ-2.7 X9315TM X9315TM-2.7 X9315TMI X9 |
:SEMITOP 3; Centres, fixing:52.5mm; Current, Ic av:40A; Current, Ic continuous b max:32A; RoHS Compliant: Yes
max:2.1V; Case style:SEMITOP 4; Current, Icm pulsed:100A; Temperature, Tj RoHS Compliant: Yes
THYRISTOR MODULE, 3 PHASETHYRISTOR MODULE, 3 PHASE; Voltage, Vrrm:1600V; Case style:SEMITOP 3; Current, It rms:68A; Current, Itsm:450A; Voltage, Vgt
:SEMITOP-4; Voltage, Vceo:1200V; Voltage, Vce sat max:2.15V; Current, Ic continuous a
continuous a max:17A; Voltage, Vce sat max:2.5V; Case style:SEMITOP 3; Current, Icm RoHS Compliant: Yes
IGBT MODULE, H BRIDGE 1200VIGBT MODULE, H BRIDGE 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3.2V
IGBT MODULE, DUAL 600V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:600V; Voltage, Vce sat max:2V; Current, Ic continuous a max:54A
IGBT MODULE, CHOPPER 1200VIGBT MODULE, CHOPPER 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3V
IGBT MODULE 6 PACK 114A 1200V TRENCHIGBT MODULE 6 PACK 114A 1200V TRENCH; Transistor type:3-phase bridge inverter; Case style:SEMITOP-4; Voltage
:SEMITOP 2; Centres, fixing:38mm; Current, Ic av:23A; Current, Ic continuous b max:15A; RoHS Compliant: Yes
IGBT MODULE, 6 PACK 1200VIGBT MODULE, 6 PACK 1200V; Transistor type:IGBT; Case style:SEMITOP 3; Voltage, Vceo:1200V; Voltage, Vce sat max:2.1V
IGBT MODULE, DUAL 1200VIGBT MODULE, DUAL 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3V; Current, Ic
MOSFET MODULE, 6 PACK 75VMOSFET MODULE, 6 PACK 75V; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:100V; Case style:SEMITOP 2
RECTIFIER SCHOTTKY SINGLE 1A 70V 25A-ifsm 0.8V-vf 0.5mA-ir DO-41 5K/AMMO
DIODE SCHOTTKY SINGLE 10V 150mW 0.37V-vf 30mA-IFM 1mA-IF 1uA-IR SOT-523 3K/REEL
IGBT MODULE, DUAL 600V; Transistor type:IGBT; Case style:SEMITOP 1; Voltage, Vceo:600V; Voltage, Vce sat max:2V; Current, Ic continuous a max:30A; Current, Icm pulsed:24A; Power, Pd:1400W; Time, rise:35ns; Centres, fixing:28.5mm;
Low Noise, Low Power, 32 Taps 10K DIGITAL POTENTIOMETER, INCREMENT/DECREMENT CONTROL INTERFACE, 32 POSITIONS, PDIP8
IGBT MODULE 6 PACK 96A 600V TRENCHIGBT MODULE 6 PACK 96A 600V TRENCH; Transistor type:3-phase bridge inverter; Case style:SEMITOP-4; Current, Ic continuous a max:100A
IGBT MODULE, 6 PACK 1200VIGBT MODULE, 6 PACK 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:2.1V; Current, Ic continuous a max:22A; Current, Icm pulsed:44A; Power, Pd:1600W; Time,
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http://
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| 2N5208 |
CASE 29-04STYLE 2 TO-92(TO-226AA)
CASE 29-04,STYLE 2 TO-92(TO-226AA)
|
Motorola, Inc.
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| BAV70LT1 |
CASE 318-08/ STYLE 9 SOT-23 (TO-236AB)
|
Motorola Inc
|
| BC857BLT1 BC857ALT1 BC858BLT1 BC856BLT1 BC857CLT1 |
CASE 318-08, STYLE 6 SOT-23 (TO-236AB)
|
MOTOROLA[Motorola, Inc]
|
| 2MBI100NE-120 |
CAPACITOR, CASE A, 22UF, 2.5V; Application:Solid; Capacitance:22uF; Tolerance, capacitance:20%; Series:NOS; Voltage, rating:2.5V; Capacitor dielectric type:Niobium Oxide; Case style:A; Depth, external:1.6mm; Length / Height, RoHS Compliant: Yes
IGBT MODULE ( N series )
|
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| RACM40-05S |
40 Watt Enclosed & Open Frame Case Style Single Output
|
Recom International Pow...
|
| BF422 BF420 ON0207 |
CASE 29-11, STYLE 14 TO-2 (TO-26AA)
From old datasheet system
High Voltage Transistors(NPN Silicon)
|
http://
ONSEMI[ON Semiconductor]
|
| TAN250A |
Case Outline 55AW / Style 1
high power COMMON BASE bipolar transistor.
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GHZTECH[GHz Technology]
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