| PART |
Description |
Maker |
| M21131G-22 M21131G-13 |
72x72/144x144 3.2 Gbps Asynchronous Crosspoint Switch with Amplif-EYE Signal Conditioning
|
M/A-COM Technology Solu...
|
| D18020U2JH6 D15020U2JH6 D22020U2JH6 D27020U2JH6 D1 |
Ceramic Singlelayer DC Disc Capacitors For General Purpose Class 1, Class 2 and Class 3, 50 VDC, 100 VDC, 500 VDC
Ceramic Singlelayer DC Disc Capacitors For General Purpose Class 1, Class 2 and Class 3, 50 VDC, 100 VDC, 500 VDC
|
Vishay Siliconix
|
| 0105-100 |
TRANSISTOR | BJT | NPN | 16A I(C) | SOT-161VAR
100 Watts, 28 Volts, Class AB Defcom 100 - 500 MHz
|
GHz Technology
|
| TDA8920 TDA8920J TDA8920TH |
2x50 W class-D power amplifier(2x50W D绫诲???????澶у?)
2 x 50 W class-D power amplifier 80 W, 2 CHANNEL, AUDIO AMPLIFIER, PDSO24
2 x 50 W class-D power amplifier
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| APA2606NAI-TRG APA2606NI-TRG |
2.8W Stereo Class-D Audio Power Amplifier and Class AB Headphone Driver
|
Anpec Electronics Coropration
|
| C0603C101J1GACTU |
Ceramic, Commercial-(CxxxxC), 100 pF, 5%, 100 V, 0603, C0G, SMD, MLCC, Ultra-Stable, Low Loss, Class I
|
Kemet Corporation
|
| MS1227 |
HF 2-50 MHz, Class C, Common Emitter; P(out) (W): 20; P(in) (W): 0.65; Gain (dB): 15; Vcc (V): 12.5; Cob (pF): 100; fO (MHz): 0; Case Style: M113 HF BAND, Si, NPN, RF POWER TRANSISTOR
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
|
Microsemi, Corp.
ADPOW
|
| PAM8008 PAM8008DR |
3W STEREO CLASS-D with DC VOLUME, POWER LIMIT and ANTI-SATURATION
3W STEREO FILTERLESS CLASS-D AUDIO AMPLIFIER WITH DC VOLUME CONTROL AND POWER LIMIT
|
Diodes Incorporated
|
| IRF130-133 IRF131 IRF132 IRF133 IRF532 IRF533 IRF5 |
N-Channel Power MOSFETs 20 A 60-100 V
N-Channel Power MOSFETs/ 20 A/ 60-100 V
CAP 220PF 200V 5% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22
N-Channel Power MOSFETs, 20 A, 60-100 V N沟道功率MOSFET0甲，60-100 V
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| MS1337 |
RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS
VHF 100-175 MHz, Class C, Common Emitter; P(out) (W): 30; P(in) (W): 3; Gain (dB): 10; Vcc (V): 12.5; Cob (pF): 120; fO (MHz): 0; Case Style: M113 VHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
