| PART |
Description |
Maker |
| HYB5117400BJ-60 HYB5117400BJ-50 HYB5116400BJ-60 HY |
4M x 4 Bit 2k 5 V 60 ns FPM DRAM
4M x 4 Bit 4k 5 V 60 ns FPM DRAM
4M x 4 Bit 2k 3.3 V 60 ns FPM DRAM
4M x 4 Bit 4k 3.3 V 60 ns FPM DRAM
4M x 4 Bit 2k 3.3 V 50 ns FPM DRAM
4M x 4 Bit 4k 3.3 V 50 ns FPM DRAM
-4M x 4-Bit Dynamic RAM
4M x 4-Bit Dynamic RAM 2k & 4k Refresh (Fast Page Mode)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| VG2618165DJ-5 |
DRAM Chip, EDO DRAM, 2MByte, 5V Supply, Commercial, SOJ, 42-Pin
|
Vanguard International Semiconductor
|
| VG2618165CJ-5 |
DRAM Chip, EDO DRAM, 2MByte, 5V Supply, Commercial, SOJ, 42-Pin
|
Vanguard International Semiconductor
|
| W1D128M72R8B-5AP-PB1 W1D128M72R8B-5AL-PB1 W1D128M7 |
128M X 8 DDR DRAM MODULE, 0.5 ns, DMA240 MO-237, DIMM-240
256M X 8 DDR DRAM MODULE, 0.5 ns, DMA240
32M X 8 DDR DRAM MODULE, 0.5 ns, DMA240
32M X 8 DDR DRAM MODULE, 0.6 ns, DMA240
64M X 8 DDR DRAM MODULE, 0.5 ns, DMA240
|
Xilinx, Inc.
XILINX INC
|
| HYB314175BJ-50- HYB314175BJL-50 HYB314175BJ-60 HYB |
High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85 3.3V56亩16位江户的DRAM 3.3V56亩16位江户与DRAM的低功率版本自刷
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh
3.3V 256 K x 16-Bit EDO-DRAM(3.3V 256K×16外延式数据输出（EDO)动态RAM)
|
http://
SIEMENS AG
|
| K4S280432B-TC_L75 K4S280432B-TC_L80 K4S280432B K4S |
32M X 4 SYNCHRONOUS DRAM, 7 ns, PDSO54
128MBIT SDRAM 8M X 4BIT X 4 BANKS SYNCHRONOUS DRAM LVTTL
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| K4S560832C K4S560832C-TC_L1H K4S560832C-TC_L1L K4S |
32M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| IS41C82002-50TI IS41LV82002-50T IS41C82002-60T IS4 |
x8 EDO Page Mode DRAM x8 EDO公司页面模式的DRAM
2M X 8 EDO DRAM, 60 ns, PDSO28
2M X 8 EDO DRAM, 50 ns, PDSO28
|
Atmel, Corp.
INTEGRATED SILICON SOLUTION INC
|
| IS42SM32100C IS42RM32100C-6BLI |
512K x32Bits x2Banks Low Power Synchronous DRAM
1M X 32 SYNCHRONOUS DRAM, 5.5 ns, PBGA90
|
Integrated Silicon Solution, Inc
INTEGRATED SILICON SOLUTION INC
|
| HY57V161610ET-7I HY57V161610ET-10I HY57V161610ET-1 |
SDRAM - 16Mb
2 Banks x 512K x 16 Bit Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO50
|
HYNIX[Hynix Semiconductor]
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| HY5756820C HY57V56820CLT-P HY57V56820CT-H HY57V568 |
4 Banks x 8M x 8Bit Synchronous DRAM 32M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
SDRAM - 256Mb
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
|
