| PART |
Description |
Maker |
| CAT34WC02W-TE13 CAT34WC02Y-TE13 CAT34WC02Y-1.8TE13 |
MoBL® 2-Mbit (256K x 8) Static RAM
MoBL® 8-Mbit (512K x 16) Static RAM
MoBL2™ 4-Mb (256K x 16) Static RAM
MoBL® 4-Mbit (256K x 16) Static RAM
5V, 3.3V, ISR™ High-Performance CPLDs
Licorice Board (CY22150 Candy Board) EEPROM
MoBL® 4-Mbit (512K x 8) Static RAM EEPROM
MoBL2™ 4-Mb (256K x 16) Static RAM EEPROM
MoBL® 2-Mbit (128K x 16) Static RAM
256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
|
Bourns, Inc.
3M Company
|
| CY62157DV3006 CY62157DV30L-55BVXE CY62157DV30L-55B |
8-Mbit (512K x 16) MoBL㈢ Static RAM
8-Mbit (512K x 16) MoBL? Static RAM
8-Mbit (512K x 16) MoBL垄莽 Static RAM
8-Mbit (512K x 16) MoBL Static RAM
|
Cypress Semiconductor
|
| CY62148DV30L CY62148DV30L-55ZSXI CY62148DV30LL CY6 |
4-Mbit (512K x 8) MoBL垄莽 Static RAM
4-Mbit (512K x 8) MoBL? Static RAM
|
Cypress Semiconductor
|
| TC55VL818FF-75 |
512K Word x 18 Bit Synchronous No-turnround Static RAM(512K 字x18位同步无转向静RAM)
|
Toshiba Corporation
|
| CY62157EV30LL-45ZXI CY62157EV30LL-45BVI |
8-Mbit (512K x 16) Static RAM 512K X 16 STANDARD SRAM, 45 ns, PBGA48
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| BB4EG BB4GK BB4KLX BB4JKX BB4DF BB4NPX |
MoBL® 8-Mbit (512K x 16) Static RAM
MoBL® 32-Mbit (2M x 16) Static RAM
MoBL® 16-Mbit (1M x 16) Static RAM
＂SHIELDING BAG 16 X 18＂＂ Inhalt pro Packung: 10 Stk. “屏蔽袋16 X 18”，“Inhalt亲Packung0沙头角。
|
ON Semiconductor
|
| CY7C1012AV33-10BGI CY7C1012AV33-8BGI CY7C1012AV33 |
512K x 24 Static RAM 512K X 24 STANDARD SRAM, 8 ns, PBGA119
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
| W24V04 |
512K×8bit CMOS Static RAM(512K×8位CMOS静态RAM)
|
Winbond Electronics Corp
|
| CY7C1012DV33-10BGXI |
12-Mbit (512K X 24) Static RAM; Density: 12 Mb; Organization: 512Kb x 24; Vcc (V): 3.0 to 3.6 V; 512K X 24 STANDARD SRAM, 10 ns, PBGA119
|
Cypress Semiconductor, Corp.
|
| TC554001AFI-70 TC554001AFTI-85 |
512K word x 8 Static RAM(512K x 8 静RAM)
|
Toshiba Corporation
|
| TC554001FTL-85V |
512K word x 8 Static RAM(512K x 8 静RAM)
|
Toshiba Corporation
|
| CY62157DV30 CY62157DV30LL-70ZXI CY62157DV30L CY621 |
8-Mbit (512K x 16) MoBL Static RAM 512K X 16 STANDARD SRAM, 45 ns, PBGA48
8-Mbit (512K x 16) MoBL Static RAM 8兆位（为512k × 16）的MoBL静态RAM
8-Mbit (512K x 16) MoBL Static RAM 512K X 16 STANDARD SRAM, 55 ns, PBGA48
8-Mbit (512K x 16) MoBL Static RAM 512K X 16 STANDARD SRAM, 45 ns, PDSO44
Circular Connector; Body Material:Aluminum; Series:PT00; No. of Contacts:39; Connector Shell Size:20; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Pin; Insert Arrangement:20-39
Circular Connector; Body Material:Aluminum; Series:PT00; No. of Contacts:39; Connector Shell Size:20; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Socket; Insert Arrangement:20-39
Bundled Coaxial Cable; Impedance:75ohm; Conductor Size AWG:30; No. Strands x Strand Size:7 x 38; Jacket Material:Polyvinylchloride (PVC); Conductor Material:Copper; Conductor Plating:Tin; Jacket Color:Matte Black RoHS Compliant: Yes
Coaxial Cable; Conductor Size AWG:30; No. Strands x Strand Size:7 x 38; Jacket Material:Polyvinylchloride (PVC); Number of Conductors:1; Voltage Nom.:600V RoHS Compliant: Yes
Quadruple 2-Input Positive-OR Gate 14-TSSOP -40 to 85
8-Mbit (512K x 16) MoBL(R) Static RAM
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
