| PART |
Description |
Maker |
| M6MGD13TW66CWG-P |
134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 67,108,864-BIT (4,194,304-WORD BY 16-BIT) CMOS MOBILE RAM 134217728位（8388608字由16位）的CMOS闪存
134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 67,108,864-BIT (4,194,304-WORD BY 16-BIT) CMOS MOBILE RAM
Memory>MCP(Multi Chip Package)>S-CSP(Stacked CSP)
|
Renesas Electronics, Corp.
Renesas Electronics Corporation
|
| EDD12322GBH-7FTS-F EDD12322GBH-6ETS-F EDD12322GBH- |
128M bits DDR Mobile RAM?/a> WTR (Wide Temperature Range)
128M bits DDR Mobile RAM WTR (Wide Temperature Range)
128M bits DDR Mobile RAM垄芒 WTR (Wide Temperature Range)
|
Elpida Memory
|
| MBM29FS12DH15PBT |
BURST MODE FLASH MEMORY CMOS 128M (8M X 16) BIT
|
SPANSION LLC
|
| EMD28164PA EMD28164PA-60 EMD28164PA-75 EMD28164PA- |
128M: 8M x 16 Mobile DDR SDRAM
|
Emerging Memory & Logic Solutions Inc
|
| MX25L12873FMI10G MX25L12873FM2I10G MX25L12873FZNI1 |
3V 128M-BIT [x 1/x 2/x 4] CMOS MXSMIO (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
| K3N9VU4000A-GC |
128M-Bit (8Mx16) CMOS MASK ROM Data Sheet
|
Samsung Electronic
|
| MBM29XL12DF-70 MBM29XL12DF-80 |
PAGE MODE FLASH MEMORY CMOS 128M BIT 页面模式闪存的CMOS 128M的钻
|
Fujitsu, Ltd.
Fujitsu Component Limited.
|
| MB84SF6H6H6L2-70 MB84SF6H6H6L2-70PBS |
3 Stacked MCP (Multi-Chip Package) FLASH & FLASH & FCRAM 128M (X16) Burst FLASH MEMORY & 128M (X16) Page/Burst Mobile FCRAM
|
Spansion Inc.
|
| UPD4632312AF9-BE85X-BC2 UPD4632312AF9-BE75X-BC2 UP |
32M-BIT CMOS MOBILE SPECIFIED RAM 2M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION 32兆位CMOS移动指明内存200万字6位温度范
CONNECTOR ACCESSORY
|
NEC, Corp.
NEC Corp.
|
| UPD45128841G5-A80T-9JF UPD45128841G5-A80LT-9JF PD4 |
SDRAM|4X4MX8|CMOS|TSOP|54PIN|PLASTIC
128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)
SDRAM|4X8MX4|CMOS|TSOP|54PIN|PLASTIC
128M-bit Synchronous DRAM 4-bank/ LVTTL WTR (Wide Temperature Range)
|
Elpida Memory, Inc.
|
