| PART |
Description |
Maker |
| LC72723 LC72723M SANYOELECTRICCO.LTD.-LC72723M |
RDS Demodulation IC
CMOS IC
|
SANYO[Sanyo Semicon Device]
|
| LC72725KVS |
CMOS IC RDS(RBDS) Demodulation IC
|
Sanyo Semicon Device
|
| TA8899AF E004040 |
From old datasheet system
FM DEMODULATION IC FOR BROADCASTING SATELLITE RECEIVER
FM DEMODULATION IC FOR BROADCASTIONG SATELLITE RECEIVER
|
TOSHIBA[Toshiba Semiconductor]
|
| KDR8702H |
N-Ch RDS(ON) = 54m 3.6 A, 20 V RDS(ON) = 38m P-Ch RDS(ON) = 110 m
|
TY Semiconductor Co., Ltd
|
| TA8899AF |
FM DEMODULATION IC FOR BRODCASTING SATELLITE RECEIVER
|
TOSHIBA
|
| CXD1961AQ |
DVB-S Frontend IC (QPSK demodulation + FEC)
|
Sony Corporation
|
| KDS8333C |
N-Channel 4.1 A, 30 V RDS(ON) = 80m RDS(ON) = 130m Low gate charge
|
TY Semiconductor Co., L...
|
| SDN520C |
N-Ch: 4.5 A, 20 V, RDS(ON) 58 m P-Ch: -4.5 A, -20 V, RDS(ON) 112 m N & P-Channel Enhancement Mode MOSFET
|
SeCoS Halbleitertechnologie GmbH
|
| IRFE230 2N6798U |
N-Channel Power MOSFET(Vdss:200V,Id(cont):4.8A,Rds(on):0.46Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):4.8A,Rds(on):0.46Ω)) N沟道功率MOSFET（减振钢板基本：200伏，身份证（续）.8A时，RDS（上）：0.46Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00伏，身份证（续）.8A时，RDS（对）：0.46Ω））
N-Channel N沟道
|
NXP Semiconductors N.V.
TT electronics Semelab Limited
Seme LAB
|
| TDA2546A |
Quasi-split-sound circuit with 5,5 MHz demodulation
|
NXP Semiconductors
Philips Semiconductors
|
| S7686 |
MOSFET, Switching; VDSS (V): -60; ID (A): -5; Pch : 20; RDS (ON) typ. (ohm) @10V: 0.14; RDS (ON) typ. (ohm) @4V[4.5V]: 0.2; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: -; toff (µs) typ: 10.8; Package: DPAK (L)- (2)
|
Hamamatsu Photonics
|
