| PART |
Description |
Maker |
| M27W400 M27W400-100B6TR M27W400-100F6TR M27W400-10 |
4 Mbit (512Kb x8 or 256Kb x16), Low Voltage UV EPROM and OTP EPROM
512K X 8 UVPROM, 100 ns, CDIP40
4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM 4兆位512KB的x856Kb的x16低压紫外线可擦写可编程只读存储器和OTP存储
256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM
|
SGS Thomson Microelectronics
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M29F400BB45N1E M29F400BB45N1F M29F400BB45N3E M29F4 |
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) single supply Flash memory
|
STMICROELECTRONICS[STMicroelectronics]
|
| M29W400BB90N6T M29W400BB90M1T M29W400BB55N1T |
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory 4兆位512KB的x856Kb的x16插槽，引导块低压单电源闪
|
STMicroelectronics N.V.
|
| 4376 M27V401 M27V401-200B1TR M27V401-200B6TR M27V4 |
4 Mbit 512Kb x8 Low Voltage UV EPROM and OTP EPROM 4兆位512KB的x8低压紫外线EPROM和检察官办公室存储器
2.5-V/3.3-V 16-Bit Bus Transceiver With 3-State Outputs 56-BGA MICROSTAR JUNIOR -40 to 85 4兆位512KB的x8低压紫外线EPROM和检察官办公室存储器
2.5-V/3.3-V 32-Bit Buffers/Drivers With 3-State outputs 96-LFBGA -40 to 85
Quadruple 2-Input Positive-NAND Gates 14-SOIC 0 to 70
2.5-V/3.3-V 16-Bit Bus Transceiver With 3-State Outputs 48-TSSOP -40 to 85
4 Mbit (512Kb x8) Low Voltage UV EPROM and OTP EPROM
From old datasheet system
4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M36W0R6030B0ZAQ M36W0R6030T0 M36W0R6030T0ZAQ M36W0 |
64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package
|
ST Microelectronics
|
| M29F400BB45N1 M29F400BB45N1T M29F400BB45N3 M29F400 |
4 MBIT (512KB X8 OR 256KB X16, BOOT BLOCK) SINGLE SUPPLY FLASH MEMORY
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory 4兆位512KB的x856Kb的x16插槽，启动座单电源闪
Dual Precision Low-Power Single Supply Operational Amplifier 8-SOIC 4兆位512KB的x856Kb的x16插槽，启动座单电源闪
Automotive Catalog Excalibur High-Speed Low-Power Precision Operational Amplifiers 8-SOIC -40 to 125 4兆位512KB的x856Kb的x16插槽，启动座单电源闪
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory 4兆位512KB的x8256Kb的x16插槽，启动座单电源闪
Excalibur High-Speed Low-Power Precision Operational Amplifier 8-SOIC 4兆位512KB的x856Kb的x16插槽，启动座单电源闪
High-Speed, Low-Power, Precision Single Operational Amplifier 8-CDIP -55 to 125 4兆位512KB的x856Kb的x16插槽，启动座单电源闪
Excalibur High-Speed Low-Power Precision Operational Amplifier 8-CDIP -55 to 125 4兆位512KB的x856Kb的x16插槽，启动座单电源闪
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| M36W832TE70ZA1T M36W832TE85ZA1T M36W832TE-ZAT M36W |
SPECIALTY MEMORY CIRCUIT, PBGA66
32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product
|
SGS Thomson Microelectronics
NUMONYX
意法半导
ST Microelectronics
|
| M28R400C-ZBT M28R400CTB120ZB1T M28R400CTB120ZB6T M |
4 Mbit (256Kb x16/ Boot Block) 1.8V Supply Flash Memory
4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory 4兆位56Kb的x16插槽，引导块.8V电源快闪记忆
|
ST Microelectronics
意法半导
STMicroelectronics N.V.
SGS Thomson Microelectronics
|
| M28W800BT85N1T M28W800BT85N6T M28W800BT85ZB1T M28W |
8 Mbit 512Kb x16/ Boot Block 3V Supply Flash Memory
8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory
8 MBIT (512KB X16, BOOT BLOCK) 3V SUPPLY FLASH MEMORY
8 Mbit 512Kb x16 Boot Block 3V Supply Flash Memory
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| M29F800DB90N3T |
8 MBIT (1MB X8 OR 512KB X16, BOOT BLOCK) 5V SUPPLY FLASH MEMORY
|
ST Microelectronics
|
| M29F800DB M29F800DB55M1E M29F800DB55M1F M29F800DB5 |
8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
