| PART |
Description |
Maker |
| IPB16CN10NG IPP16CN10NG10 IPI16CN10NG IPD16CN10NG |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
| IPU10N03LA Q67042-S4238 IPD10N03LA IPS10N03LA IPF1 |
OptiMOS®2 - Power packages OptiMOS2 Power-Transistor OptiMOS2功率晶体 30 A, 25 V, 0.0104 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
|
INFINEON[Infineon Technologies AG]
|
| BSC042N03S |
XTAL CER SMT 7X5 2PAD OptiMOS2 Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| BSO350N03 |
Low Voltage MOSFETs - OptiMOS? Power MOSFET, 30V, SO8, RDSon = 35mOhm, 6.0A, LL, dual OptiMOS2 Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| BSO104N03S |
Low Voltage MOSFETs - OptiMOS? Power MOSFET, 30V, SO8, RDSon = 9.7mOhm, 13A, LL OptiMOS2 Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| Q67042S4291 BSC094N03S BSC094N03SG Q67042-S4291 |
OptiMOS2 Power-Transistor OptiMOS2功率晶体 OptiMOS®2 - SuperSO8, SO8, DPAK
|
INFINEON[Infineon Technologies AG]
|
| BSR302N |
OptiMOS2 Small-Signal-Transistor
|
Infineon Technologies AG
|
| BSL205N |
OptiMOS2 Small-Signal-Transistor
|
Infineon Technologies AG
|
| BSL302SN |
OptiMOS2 Small-Signal-Transistor
|
Infineon Technologies AG
|
| IPU07N03LA |
OptiMOS®2 - Power packages OptiMOS2 Power MOSFET. 25V. TO251. RDSon = 6.5mOhm. 30A. LL ?的OptiMOS功率MOSFET25V的TO251。导通状态\u003d 6.5mOhm30A条。当地雇员?
|
Infineon Toshiba, Corp.
|