| PART |
Description |
Maker |
| IT2002 |
2 to 26.5 GHz dual-channel high-power amplifier
|
Iterra
|
| NTHD4502N NTHD4502NT1 NTHD4502NT1G |
Power MOSFET 30 V, 2.9 A, Dual N-Channel, ChipFET™
POWER MOSFET 30 V, 3.9 A, DUAL N−CHANNEL CHIPFET
Power MOSFET 30 V, 3.9 A, Dual N−Channel ChipFET 2200 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
ONSEMI[ON Semiconductor]
|
| NTHD5902T1 NTHD5902T1-D |
Power MOSFET Dual N-Channel ChipFET 2.9 Amps, 30 Volts
Power MOSFET Dual N-Channel ChipFET TM(双N沟道ChipFET TM功率MOSFET) 2900 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
ON Semiconductor
|
| UPB1502GR UPB1502GR1 UPB1502GR1-E1 UPB1502GR-E1 |
1.7 GHz/ 2.0 GHz LOW-POWER TWO-MODULUS PRESCALER DIVIDED-BY-64/65, 128/129 1.7千兆 2.0 GHz的低功耗双分频DIVIDED-BY-64/65，一百二十九分之一百二十八
1.7 GHz/ 2.0 GHz Low-Power Two-Modulus Prescaler(1.7GHz 2.0GHz 定标
|
NEC, Corp.
NEC Corp.
|
| HMC469MS8G |
SiGe HBT DUAL CHANNEL GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz
|
HITTITE[Hittite Microwave Corporation]
|
| ADL5802 |
Dual Channel High IP3 100 MHz TO 6 GHz Active Mixer
|
Analog Devices
|
| HMC818LP4E10 |
GaAs SMT pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz
|
Hittite Microwave Corporation
|
| HMC818LP4E |
GaAs SMT PHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz
|
Hittite Microwave Corporation
|
| HMC471MS8G |
SiGe HBT DUAL CHANNEL GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz
|
HITTITE[Hittite Microwave Corporation]
|
| FDMQ8203 |
100V Dual N-Channel and Dual P-Channel PowerTrenchMOSFET, GreenBridgeSeries of High-Efficiency Bridge Rectifiers
GreenBridgeTM Series of High-Efficiency Bridge Rectifiers Dual N-Channel and Dual P-Channel PowerTrench? MOSFET N-Channel: 100 V, 6 A, 110 mΩ P-Channel: -80 V, -6 A, 190 mΩ
|
Fairchild Semiconductor
|
| MC12058 MC12058D |
1.1 GHz Low Power Dual Modulus Prescaler
|
Motorola, Inc
|
