| PART |
Description |
Maker |
| AS4C256K16FO |
5V 256K × 16 CMOS DRAM (Fast Page Mode)(5V 256K × 16 CMOS动态RAM（快速页面模式）)
|
Alliance Semiconductor Corporation
|
| V53C16258L V53C16258SLT40 V53C16258SLT45 V53C16258 |
HIGH PERFORMANCE 3.3 VOLT 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH
256K X 16 EDO DRAM, 50 ns, PDSO40
|
Mosel Vitelic, Corp.
Mosel Vitelic Corp
MOSEL-VITELIC
|
| HY514260 |
256K x 16 CMOS DRAM
|
Hynix Semiconductor
|
| KM44S32030T-G_F10 KM44S32030T-G_FH KM44S32030T-G_F |
8M x 4Bit x 4 Banks Synchronous DRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| HY57V64420HG HY57V64420HGLT-H HY57V64420HGLT-K HY5 |
4 Banks x 4M x 4Bit Synchronous DRAM
x4 SDRAM
|
http://
Hynix Semiconductor
|
| K4S640432E-TC K4S640432E K4S640432E-L1H K4S640432E |
4M x 4Bit x 4 Banks Synchronous DRAM Data Sheet
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4S280432A K4S280432A-TC_L10 K4S280432A-TC_L1H K4S |
128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung semiconductor
|
| AM90CL255-08JC AM90CL255-15JC AM90CL255-12PC |
256K X 1 NIBBLE MODE DRAM, 80 ns, PQCC18
256K X 1 NIBBLE MODE DRAM, 150 ns, PQCC18
256K X 1 NIBBLE MODE DRAM, 120 ns, PDIP16
|
ADVANCED MICRO DEVICES INC
|
| KM44C258BJ-8 KM44C258BP-8 KM44C258BP-7 KM44C258BZ- |
256K X 4 STATIC COLUMN DRAM, 80 ns, PDSO20
256K X 4 STATIC COLUMN DRAM, 80 ns, PDIP20
256K X 4 STATIC COLUMN DRAM, 70 ns, PDIP20
256K X 4 STATIC COLUMN DRAM, 80 ns, PZIP19
|
|
| KM44C1000D KM44V1000D KM44C1000DJL-7 KM44C1000DJL- |
1M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns
1M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns
1M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns
1M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns
1M x 4bit CMOS dynamic RAM with fast page mode, 5V, 70ns
|
Samsung Electronic
|
