| PART |
Description |
Maker |
| IPB80P03P4L-07 IPI80P03P4L-07 IPP80P03P4L-07 |
OptiMOS-P2 Power-Transistor
80 A, 30 V, 0.0069 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB GREEN, PLASTIC, TO-263, 3 PIN
80 A, 30 V, 0.0072 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-262AA GREEN, PLASTIC, TO-262, 3 PIN
80 A, 30 V, 0.0072 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB GREEN, PLASTIC, TO-220, 3 PIN
|
Infineon Technologies AG
|
| IRHE7230 IRHE8230 IRHE3230 IRHE4230 JANSF2N7262U J |
200V 600kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a 18-pin LCC package
200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a 18-pin LCC package
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18)
200V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a 18-pin LCC package 200000kRad高可靠性单个N -沟道工贸署在18硬化MOSFET的引脚LCC封装
200V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a 18-pin LCC package 20000kRad高可靠性单个N -沟道工贸署在18硬化MOSFET的引脚LCC封装
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| AP0130 AP0130NA AP0130NB AP0130ND AP0132ND AP0132N |
ER 7C 7#16S PIN RECP
AB 5C 5#12 PIN RECP
8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode 15 mA, 320 V, 8 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode 8通道阵列单片功率MOSFET N沟道增强模式
8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode 15 mA, 160 V, 8 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode 15 mA, 300 V, 8 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode 200 V, 8 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
AB 5C 5#12 SKT RECP 8通道阵列单片功率MOSFET N沟道增强模式
|
SUTEX[Supertex Inc]
Supertex Inc
SUTEX[Supertex, Inc]
Supertex, Inc.
|
| APT18F60B APT38F80L APT29F100L APT29F80J APT21M100 |
15 A, 600 V, 0.39 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AB ROHS COMPLIANT, 3 PIN
22 A, 800 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA ROHS COMPLIANT, T-MAX, 3 PIN
1000V, 29A, 0.46Max, trr ÷270ns N-Channel FREDFET 17 A, 1000 V, 0.46 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
Power FREDFET; Package: ISOTOP®; ID (A): 31; RDS(on) (Ohms): 0.21; BVDSS (V): 800; 44 A, 800 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET
31 A, 1000 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET
Power FREDFET; Package: TO-247 [B]; ID (A): 14; RDS(on) (Ohms): 0.98; BVDSS (V): 1000;
53 A, 600 V, 0.62 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
24 A, 800 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
|
Microsemi, Corp.
MICROSEMI CORP
|
| 2SK4057 2SK4057-ZK-E2-AY |
30 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA LEAD FREE, TO-252, MP-3ZK, 3 PIN
SWITCHING N-CHANNEL POWER MOSFET
|
NEC
|
| 2SK3991-ZK 2SK3991 2SK3991-ZK-E1-AZ |
30000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA LEAD FREE, TO-252, MP-3ZK, 3 PIN
SWITCHING N-CHANNEL POWER MOSFET
|
NEC
|
| DMN4015LK3 DMN4015LK3-13 |
13.5 A, 40 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA GREEN, PLASTIC, TO-252, 3 PIN
40V N-CHANNEL ENHANCEMENT MODE MOSFET
|
Diodes, Inc.
Diodes Incorporated
|
| IRHQ597110 IRHQ597110P |
100V Quad P-Channel MOSFET in a 28-pin LCC package
-100V 100kRad Hi-Rel Quad P -Channel TID Hardened MOSFET in a 28-pin LCC package
RADIATION HARDENED POWER MOSFET
|
International Rectifier
|
| IRHE57133SE |
TRANSISTOR | MOSFET | N-CHANNEL | 130V V(BR)DSS | 9A I(D) | LLCC
RADIATION HARDENED POWER MOSFET
130V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a 18-pin LCC package
|
International Rectifier
|
| IRFY230C IRFY230C-JQR-BR1 |
9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AB HERMETIC SEALED, METAL, TO-220M, 3 PIN
N-Channel MOSFET in a Hermetically sealed
|
TT electronics Semelab, Ltd.
Seme LAB
|
| BUZ40B BSP372 BSP373 BSS129 BSS101 SN7000 BSS135 |
8 A, 500 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 TO-220, 3 PIN
SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level Avalanche rated 1.7 A, 100 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET
SIPMOS Small-Signal Transistor (N channel Enhancement mode Avalanche rated)
150 mA, 240 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
130 mA, 240 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
250 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
80 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
|
Infineon Technologies AG
SIEMENS AG
SIEMENS A G
|
|
