| PART |
Description |
Maker |
| SUM40N10-30 |
N-Channel 100-V (D-S) 175C MOSFET
|
VISAY[Vishay Siliconix]
|
| SUD50P04-09L |
P-Channel, Tj = 175 °C power MOSFET;
low leakage current;
P-Channel 40-V (D-S) 175C MOSFET
P-Channel 40-V (D-S), 175C MOSFET
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| UPA502T PA502T G11238EJ1V0DS00 UPA502T-T1 UPA502T- |
100 mA, 50 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
From old datasheet system
MOS Field Effect Transistor
N-CHANNEL MOS FET 5-PIN 2 CIRCUITS
Silicon transistor
|
NEC Corp.
NEC[NEC]
|
| SUM16N20-125 |
N-Channel 200-V (D-S) 175C MOSFET N沟道200 -五（副）175C MOSFET
|
Vishay Intertechnology,Inc.
Vishay Intertechnology, Inc.
|
| SUP75P05-08 SUB75P05-08 |
P-Channel 55-V (D-S), 175C MOSFET P通道55 - V（下局副局长）75C MOSFET
P-Channel MOSFET
P-Channel 55-V (D-S) 175C MOSFET
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| SUD50M02-12P SUD50N02-12P |
N-Channel 20-V (D0S) 175C MOSFET
N-Channel 20-V (D-S) 175-LC MOSFET
N - CHANNEL 20 - V ( D -S ) 175C MOSFET
|
VISAY[Vishay Siliconix]
|
| APT20M22LVR APT20M22LVRG |
Power MOSFET; Package: TO-264 [L]; ID (A): 100; RDS(on) (Ohms): 0.022; BVDSS (V): 200; 100 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 100A 0.022 Ohm
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| SUP65P06-20 SUB65P06-20 |
From old datasheet system
P-Channel Enhancement-Mode Trans
P-Channel 60-V (D-S), 175C MOSFET
TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,65A I(D),TO-220AB
P-Channel MOSFET
30V N-Channel PowerTrench MOSFET
|
VISAY[Vishay Siliconix]
Vishay Intertechnology Inc
Vishay Intertechnology,Inc.
|
| SUM85N03-06P |
N-Channel 30-V (D-S) 175C MOSFET
|
Vishay
|
