| PART |
Description |
Maker |
| APT1004R2KN APT1004RKN |
POWER MOS IV 1000V 3.6A 4.00 Ohm / 1000V 3.5A 4.20 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
| STW8NB100 6509 |
N - CHANNEL 1000V - 1.2ohm- 8A - TO-247 PowerMESH MOSFET
From old datasheet system
N - CHANNEL 1000V - 1.2 - 8A - TO-247 PowerMESH TM MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| APT17F100B APT17F100S |
N-Channel FREDFET 1000V, 17A, 0.80Ω Max, trr ?45ns
N-Channel FREDFET 1000V, 17A, 0.80ヘ Max, trr ÷245ns
|
Microsemi Corporation
|
| IRFBG20 |
1000V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
HEXFET? Power MOSFET
Power MOSFET(Vdss=1000V, Rds(on)=11ohm, Id=1.4A)
|
IRF[International Rectifier]
|
| SML100W18 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:1000V,Id(cont):17.3A,Rds(on):0.57Ω)(N沟道增强高电压功率MOS场效应管(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω))
|
SemeLAB
SEME-LAB[Seme LAB]
|
| IRFBG30 |
1000V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=1000V, Rds(on)=5.0ohm, Id=3.1A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=1000V/ Rds(on)=5.0ohm/ Id=3.1A)
|
IRF[International Rectifier]
|
| STY15NA100 5850 |
N-CHANNEL Power MOSFET
From old datasheet system
N - CHANNEL 1000V - 0.65 ohm - 15A - Max247 MOSFET
|
STMicroelectronics
ST Microelectronics
|
| STW8NB100 |
N-CHANNEL 1000V - 1.3 OHM - 7.3A - TO-247 POWERMESH MOSFET
|
ST Microelectronics
|
| STW11NK100Z |
N-channel 1000V - 1.1Ω - 8.3A - TO-247 Zener - Protected SuperMESH PowerMOSFET
|
STMicroelectronics
|
| STP5NB100 STP5NB100FP |
N-CHANNEL 1000V - 2.4 OHM - 5A - TO-220/TO-220FP POWERMESH MOSFET
|
ST Microelectronics
|
| IRFPG30 |
1000V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
|
International Rectifier
|
