PART |
Description |
Maker |
MMFT3055EL |
MEDIUM POWER LOGIC LEVEL TMOS FET 1.5 AMP 60 VOLTS
|
Motorola, Inc. MOTOROLA[Motorola, Inc]
|
PHD108NQ03LT PHB108NQ03LT PHP_PHB_PHD108NQ03LT-02 |
TrenchMOS(tm)logic level FET From old datasheet system TrenchMOS TM logic level FET TrenchMOS logic level FET 75 A, 25 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
|
PHILIPS[Philips Semiconductors] NXP Semiconductors N.V.
|
MTB10N40E MTB10N40E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 10 AMPERES
|
ON Semiconductor MOTOROLA[Motorola, Inc]
|
MTB9N25E MTB9N25E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 9.0 AMPERES 250 VOLTS
|
ON Semiconductor MOTOROLA[Motorola, Inc]
|
MTB2N60E_D ON2407 MTB2N60E MTB2N60E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 2.0 AMPERES 600 VOLTS From old datasheet system
|
ON Semiconductor MOTOROLA[Motorola, Inc]
|
MTB3N100E_D ON2419 MTB3N100E 3N100E MTB3N100E-D |
From old datasheet system TMOS POWER FET 3.0 AMPERES 1000 VOLTS TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
|
Motorola, Inc. MOTOROLA[Motorola, Inc] ON Semiconductor
|
MTY16N80E_D MTY16N80E ON2712 MTY16N80E-D |
TMOS E-FET Power Field Effect Transistor TMOS POWER FET 16 AMPERES 800 VOLTS RDS(on) = 0.50 OHM From old datasheet system
|
ON Semiconductor MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
|
PHD82NQ03LT PHP82NQ03LT PHB82NQ03LT PHP_PHB_PHD82N |
TrenchMOS?/a> logic level FET TrenchMOS logic level FET TrenchMOS⑩ logic level FET From old datasheet system TrenchMOS(tm) logic level FET
|
http:// NXP Semiconductors PHILIPS[Philips Semiconductors]
|
BUK9628-100A BUK9528-100A NXPSEMICONDUCTORS-BUK962 |
TrenchMOS transistor Logic level FET 49 A, 100 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TrenchMOS(tm) transistor Logic level FET
|
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
MTP2N60E_D ON2581 MTP2N60 MTP2N60E MTP2N60E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement - Mode Silicon Gate From old datasheet system TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS
|
ON Semiconductor Motorola, Inc
|
MTD1N80E MTD1N80E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS(on) = 12 OHM
|
ON Semiconductor Motorola, Inc
|