| PART |
Description |
Maker |
| CY7C1168V18-400BZXC CY7C1168V18-375BZXC CY7C1168V1 |
1M X 18 DDR SRAM, 0.45 ns, PBGA165 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165
18-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) 1M X 18 DDR SRAM, 0.45 ns, PBGA165
2M X 8 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| CY7C1146V18-333BZI CY7C1146V18-375BZI CY7C1148V18- |
18-Mbit DDR-II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
|
Cypress Semiconductor Corp.
|
| CY7C1270V18 CY7C1270V18-300BZC CY7C1270V18-300BZI |
36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
|
Cypress Semiconductor
|
| CY7C1148KV18-400BZC |
18-Mbit DDR II SRAM Two-Word Burst Architecture (2.0 Cycle Read Latency)
|
Cypress
|
| CY7C1277V18 CY7C1277V18-300BZC CY7C1277V18-300BZI |
36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
|
Cypress Semiconductor
|
| CY7C2168KV18 CY7C2170KV18 |
18-Mbit DDR II SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) with ODT
|
Cypress Semiconductor
|
| RMQCLA3636DGBA-15 |
36-Mbit DDR?II SRAM 2-word Burst Architecture (2.0 Cycle Read latency) with ODT
|
Renesas Electronics Corporation
|
| CY7C1568XV18-600BZXC CY7C1570XV18-600BZXC CY7C1568 |
72-Mbit DDR II Xtreme SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
|
Cypress Semiconductor
|
| CY7C2270XV18 CY7C2268XV18 |
36-Mbit DDR II Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) with ODT
|
Cypress Semiconductor
|
| CY7C1550KV18-450BZC CY7C1550KV18-400BZC CY7C1548KV |
Sync SRAM; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 2M X 36 DDR SRAM, 0.45 ns, PBGA165
72-Mbit DDR II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
|
Cypress Semiconductor, Corp.
|
