PART |
Description |
Maker |
HM65256B |
32768 word x 8 Bit High Speed Psuedo Statie RAM
|
Hitachi
|
CXK5T8257BM CXK5T8257BM-10LLX CXK5T8257BM-12LLX CX |
32768-word X 8-bit High Speed CMOS Static RAM
|
SONY[Sony Corporation]
|
M5M5256DFP-10VLL M5M5256DFP-10VXL M5M5256DFP-12VLL |
From old datasheet system Octal D-Type Transparent Latches With 3-State Outputs 20-TSSOP -40 to 85 262144位(32768 - Word位)的CMOS静态RAM 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位(32768 - Word位)的CMOS静态RAM Octal Edge-Triggered D-Type Flip-Flops With 3-State Outputs 20-SOIC -40 to 85 262144位(32768 - Word位)的CMOS静态RAM 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位(32768 - Word8位)的CMOS静态RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
|
CXK5864BM-10L CXK5864B CXK5864BP-10L CXK5864BP-12L |
Series 400B sealed SMT sub-miniature rocker switch with variety of switching functions 8,192-WORD X 8-BIT HIGH SPEED CMOS STATIC RAM 8192-WORD X 8-BIT HIGH SPEED CMOS STATIC RAM 8,192字8位高速CMOS静态RAM
|
http:// SONY[Sony Corporation]
|
AD9260 AD9260AS AD9260EB |
16-Bit High Speed Oversampled A/D Converter High-Speed Oversampling CMOS ADC with 16-Bit Resolution at a 2.5 MHz Output Word Rate
|
AD[Analog Devices]
|
MX566AJCWG MX566AJD MX566AJN MX566AJQ MX566AKCWG M |
(MX565A / MX566A) High Speed 12-Bit Monolithic D/A Converters JT 8C 8#16 SKT WALL RECP 高2位单D / A转换 High Speed 12-Bit Monolithic D/A Converters PARALLEL, WORD INPUT LOADING, 0.15 us SETTLING TIME, 12-BIT DAC, PDSO24
|
MAXIM - Dallas Semiconductor MAXIM[Maxim Integrated Products] Maxim Integrated Products, Inc.
|
M5M5256DFP-70G M5M5256DFP-70GI M5M5256DVP-70G M5M5 |
32K X 8 STANDARD SRAM, 70 ns, PDSO28 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM Memory>Low Power SRAM
|
Renesas Electronics Corporation
|
M6MGT331S8BKT M6MGB331S8BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation
|
M6MGB331S8AKT M6MGT331S8AKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation.
|
LC35256DM LC35256DT-10 LC35256DT-70 LC35256D-10 25 |
x8 SRAM Dual Control Pins: OE and CE 256K (32768-word X 8-bit) SRAM
|
SANYO[Sanyo Semicon Device] Sanyo Electric Co.,Ltd.
|
HM628128FP-10 HM628128FP-12 HM628128FP-7 HM628128F |
100ns; V(cc): -0.5 to 7.0V; 1W; 131072-word x 8-bit high speed CMOS static RAM 120ns; V(cc): -0.5 to 7.0V; 1W; 131072-word x 8-bit high speed CMOS static RAM
|
HITACHI[Hitachi Semiconductor]
|
TC55257BFL-10L TC55257BFL-85 TC55257BPL-10 TC55257 |
85ns; V(dd/in): -0.3 to 7.0V; silicon gate CMOS: 32,768 word x 8-bit staic RAM (TC55257xxx) SILICON GATE CMOS 32768 WORD X 8 BIT STATIC RAM SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM 硅栅CMOS 32768字8位静态RAM
|
TOSHIBA[Toshiba Semiconductor] Toshiba Corporation Toshiba, Corp.
|