| PART |
Description |
Maker |
| BF966S |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode From old datasheet system N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
|
Vishay Siliconix Vishay Telefunken
|
| 3SK249 E001708 |
N CHANNEL DUAL GATE MOS TYPE (TV TUNER/ UHF RF AMPLIFIER APPLICATIONS) N CHANNEL DUAL GATE MOS TYPE (TV TUNER, UHF RF AMPLIFIER APPLICATIONS) From old datasheet system
|
Toshiba Semiconductor Sanyo Semicon Device
|
| BF1102 |
Dual N-channel dual gate MOS-FET
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|
| BF998WR |
N-channel dual-gate MOS-FET
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|
| BF909 BF909WR115 BF909WR135 |
N-channel dual gate MOS-FETs
|
NXP Semiconductors N.V.
|
| BF908WR |
N-channel dual-gate MOS-FET
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|
| BF1105WR BF1105 BF1105R |
CONNECTOR N-channel dual-gate MOS-FETs
|
PHILIPS[Philips Semiconductors] NXP Semiconductors
|
| 3SK297ZP-TL-E 3SK297 |
Silicon N-Channel Dual Gate MOS FET
|
Renesas Electronics Corporation
|
| BF1202WR BF1202R BF1202 |
N-channel dual-gate PoLo MOS-FETs
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|
| BF966 |
N-Channel Dual Gate MOS Fieldeffect Tetrod
|
Telefunken
|
| 3SK103 |
Silicon N-Channel Dual Gate MOS FET
|
ETC
|