| PART |
Description |
Maker |
| BF966S |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
From old datasheet system
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
|
Vishay Siliconix
Vishay Telefunken
|
| 3SK249 E001708 |
N CHANNEL DUAL GATE MOS TYPE (TV TUNER/ UHF RF AMPLIFIER APPLICATIONS)
N CHANNEL DUAL GATE MOS TYPE (TV TUNER, UHF RF AMPLIFIER APPLICATIONS)
From old datasheet system
|
Toshiba Semiconductor
Sanyo Semicon Device
|
| BF909WR |
N-channel dual-gate MOS-FET
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BF1109 BF1109R BF1109WR |
N-channel dual-gate MOS-FETs
|
Philips Semiconductors
|
| BF996S |
N-channel dual-gate MOS-FET
|
NXP Semiconductors
Philips Semiconductors
|
| BF998WR |
N-channel dual-gate MOS-FET
|
Philips
|
| 3SK45 |
Silicon N-Channel Dual Gate MOS FET
|
Hitachi
|
| BF998 BF998R |
Silicon N-channel dual-gate MOS-FETs
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BF966 |
N-Channel Dual Gate MOS Fieldeffect Tetrod
|
Telefunken
|
| BF1201WR BF1201R BF1201 BF1201-15 BF1201-2015 |
N-channel dual-gate PoLo MOS-FETs
|
Quanzhou Jinmei Electro...
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| 3SK186 |
Silicon N-Channel Dual Gate MOS FET
|
Hitachi Semiconductor
|
