| PART |
Description |
Maker |
| IRG4RC10U IRG4RC10UTR IRG4RC10UTRL IRG4RC10UTRR |
600V UltraFast 8-60 kHz Discrete IGBT in a D-Pak package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.15V, @Vge=15V, Ic=5.0A)
|
International Rectifier
|
| ZXTP25015DFHTA ZXTP25015DFH |
15V, SOT23, PNP medium power transistor
|
ZETEX[Zetex Semiconductors]
|
| ZXTP25015DFH ZXTP25015DFHTA |
15V, SOT23, PNP medium power transistor
|
Diodes Incorporated
|
| ZXTP23015CFHTA ZETEXSEMICONDUCTOR-ZXTP23015CFH07 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors
15V, SOT23, PNP medium power transistor
5000 mA, 15 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
Diodes Incorporated
|
| 2SJ621 2SJ621-T2B 2SJ621-T1B |
RF Bipolar Transistor; Collector Emitter Voltage, Vceo:600mV; Transistor Polarity:Dual P Channel; Power Dissipation:0.36W; C-E Breakdown Voltage:15V; DC Current Gain Min (hfe):20; Collector Current:200mA
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET
|
NEC Corp.
NEC[NEC]
|
| ZXTDAM832TA |
DUAL 15V NPN LOW SATURATION SWITCHING TRANSISTOR
|
Diodes Incorporated
|
| IRG4PH40U |
41 A, 1200 V, N-CHANNEL IGBT, TO-247AC
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A) 绝缘栅双极晶体管（VCES和\u003d 1200伏，的Vce（on）典\u003d 2.43V，@和VGE \u003d 15V的，集成电路\u003d 21A条）
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V Vce(on)typ.=2.43V @Vge=15V Ic=21A)
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRG4PC40S IRG4PC40 |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.32V, @Vge=15V, Ic=31A)
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V Vce(on)typ.=1.32V @Vge=15V Ic=31A)
600V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package
|
IRF[International Rectifier]
|
| IRGPH20M IRGPH20 |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=4.5A)
|
IRF[International Rectifier]
|
| DSS2515M-7B |
15V LOW VCE(sat) NPN SURFACE MOUNT TRANSISTOR
|
Diodes Incorporated
|
| IRGPC20F |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=9.0A)
|
IRF[International Rectifier]
|
