| PART |
Description |
Maker |
| QM30HQ-24 |
MITSUBISHI TRANSISTOR MODULES DRIVE USE FOR HIGH POWER TRANSISTOR INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| MCC44 MCC44-08IO1B MCC44-08IO8B MCC44-12IO1B MCC44 |
Thyristor Modules Thyristor/Diode Modules 80 A, 1800 V, SCR, TO-240AA
Thyristor Modules Thyristor/Diode Modules 80 A, 1600 V, SCR, TO-240AA
Thyristor Modules Thyristor/Diode Modules 80 A, 1200 V, SCR, TO-240AA
Thyristor Modules Thyristor/Diode Modules 80 A, 800 V, SCR, TO-240AA
Thyristor Modules Thyristor/Diode Modules 80 A, 1400 V, SCR, TO-240AA
Thyristor and Rectifiers Modules
|
IXYS, Corp.
IXYS Corporation
|
| SK100DAL100D SK100DB100D |
NPN POWER DARLUNGTON MODULES 100A 1000V 100 A, 2 CHANNEL, NPN, Si, POWER TRANSISTOR
NPN Power Darlington Modules
|
Semikron International
|
| QM100DY-24 QM100DY-24K |
100 A, 2 CHANNEL, NPN, Si, POWER TRANSISTOR
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MII75-12A3 MDI75-12A3 MID75-12A3 |
IGBT Modules - Short Circuit SOA Capability Square RBSOA 90 A, 1200 V, N-CHANNEL IGBT
IGBT Modules: Boost Configurated IGBT Modules
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| M57915L |
HYBRID IC FOR DRIVING TRANSISTOR MODULES
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| RN2112FT RN2113FT |
IGBT Modules up to 600V Dual; Package: PG-LQFP-64; Max Clock Frequency: 40.0 MHz; SRAM (incl. Cache): 8.0 KByte; CAN Nodes: 2; A / D input lines
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| SQD400AA100 |
DARLINGTON TRANSISTOR MODULES
Transistors Module
From old datasheet system
|
SANREX[SanRex Corporation]
|
| QM200DY-24 |
TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| QM15KD-HB |
TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| CR8AM-12 CR8AM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
|
