| PART |
Description |
Maker |
| BSS84P |
Low Voltage MOSFETs - Small Signal MOSFET, -60V, SOT-23, RDSon = 8
|
Infineon
|
| BSP613P |
Low Voltage MOSFETs - Small Signal MOSFET, -60V, SOT-223, RDSon = 0.13
|
Infineon
|
| VAM40 |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 12A I(C) | SOT-121VAR
40 Watts, 27 Volts, Class AB Defcom 100 - 150 MHz
|
GHZTECH[GHz Technology]
|
| 1N5392-T3 1N5392-TB 1N5399-T3 1N5399-TB 1N5398-TB |
RECT SCHOTTKY 60V 3A POWERMITE3
1.5A SILICON RECTIFIER 1.5A的整流硅
DIODE DUAL SW 75V 350MW SOT-23 1.5A的整流硅
|
WTE[Won-Top Electronics]
Won-Top Electronics Co., Ltd.
|
| SSI894501 SST211-T1 SSTZ42-T1 |
QUAD LCC 60V 100 MILIOHM NCH
Trans MOSFET N-CH 30V 0.05A 4-Pin(3 Tab) SOT-143 T/R
SOT23 NCH JFET
|
Vishay Semiconductors
|
| FA1F4Z FA1F4ZL65 FA1F4Z-L FA1F4Z-T2B |
Compound transistor
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLD
TRANSISTOR | 60V V(BR)CEO | 100MA I(C) | SOT-346
|
NEC Corp.
|
| NDT3055J23Z NDT3055NL |
N-Channel Enhancement Mode Field Effect Transistor
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 4A I(D) | SOT-223
|
Fairchild Semiconductor
|
| 0104-100 |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 16A I(C) | SOT-161VAR 晶体管|晶体管|叩| 60V的五（巴西）总裁| 16A条一c）|的SOT - 161VAR
|
HIROSE ELECTRIC Co., Ltd.
|
| 2SD1480P |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 2A I(C) | SOT-186 晶体管|晶体管|叩| 60V的五（巴西）总裁|甲一（c）|的SOT - 186
|
Toshiba, Corp.
|
| ZXMS6002GTA ZXMS6002G |
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET
1.6 A, 60 V, 0.675 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA SOT-223, 4 PIN
|
Diodes, Inc.
Diodes Incorporated
Diodes Inc.
|
| 2SB941Q 2SB941P 2SB941AQ 2SB941R 2SB941AR |
3-Pin, Ultra-Low-Power SC70/SOT23 Voltage Detectors
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | SOT-186 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 3A条一（c）|的SOT - 186
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 3A I(C) | SOT-186 晶体管|晶体管|进步党| 80V的五（巴西）总裁| 3A条一（c）|的SOT - 186
|
Panasonic, Corp.
Fairchild Semiconductor, Corp.
|
