| PART |
Description |
Maker |
| 2SC3325 E000829 |
NPN EPITAXIAL TYPE (AUDIO FREQUENCY SOW POWER/ DRIVER STAGE AMPLIFIER/ SWITCHING APPLICATIONS)
NPN EPITAXIAL TYPE (AUDIO FREQUENCY SOW POWER, DRIVER STAGE AMPLIFIER, SWITCHING APPLICATIONS)
From old datasheet system
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 2SC311303 2SC3113 |
Transistor Silicon NPN Epitaxial Type For Audio Amplifier and Switching Applications
|
Toshiba Semiconductor
|
| HN1B01FU HN1B01FUGR |
TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 50V V(BR)CEO | 150MA I(C) | TSOP
Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications
|
TOSHIBA
|
| 2SC4207 E000914 |
NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
From old datasheet system
|
Toshiba Semiconductor
|
| 2SC3381 E000839 |
NPN EPITAXIAL TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS RECOMMENDED FOR CASCODE, CURRENT MIRROR CIRCUIT OF THE FIRST STAGE OF PRE, MAIN AMPLIFIERS) npn型外延型（低噪声音频放大器应用推荐用于级联，电流镜电路学前，主功放的第一阶段
From old datasheet system
NPN EPITAXIAL TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS RECOMMENDED FOR CASCODE/ CURRENT MIRROR CIRCUIT OF THE FIRST STAGE OF PRE/ MAIN AMPLIFIERS)
|
Toshiba Semiconductor
|
| 2SC420707 2SC4207 |
Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications
|
Toshiba Semiconductor
|
| 2SC3421 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS
|
TOSHIBA
|
| HN1B01FU |
Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications
|
Toshiba Semiconductor
|
| HN1B01FU07 |
Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications
|
Toshiba Semiconductor
|
| HN1B04F07 HN1B04F |
Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications
|
Toshiba Semiconductor
|
