PART |
Description |
Maker |
NDS352APD87Z |
900 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP
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ISD380-9 ISD25-15 ISDF65-7 ISD320-16 ISDR320-22 IS |
380 A, 900 V, SILICON, RECTIFIER DIODE 25 A, 1500 V, SILICON, RECTIFIER DIODE 65 A, 700 V, SILICON, RECTIFIER DIODE 320 A, 1600 V, SILICON, RECTIFIER DIODE 320 A, 2200 V, SILICON, RECTIFIER DIODE 160 A, 1400 V, SILICON, RECTIFIER DIODE 65 A, 400 V, SILICON, RECTIFIER DIODE 380 A, 1300 V, SILICON, RECTIFIER DIODE 380 A, 1200 V, SILICON, RECTIFIER DIODE 380 A, 1500 V, SILICON, RECTIFIER DIODE 380 A, 600 V, SILICON, RECTIFIER DIODE 380 A, 400 V, SILICON, RECTIFIER DIODE 380 A, 500 V, SILICON, RECTIFIER DIODE 160 A, 900 V, SILICON, RECTIFIER DIODE 160 A, 1000 V, SILICON, RECTIFIER DIODE 160 A, 500 V, SILICON, RECTIFIER DIODE
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|
TMP95C061B E_030331_95C061B_SUMMARY |
16-Bit Microcontroller TLCS-900 Family: 900/H Series From old datasheet system
|
Toshiba
|
TMP95FY64 E_030331_95FY64_SUMMARY |
16-Bit Microcontroller TLCS-900 Family: 900/H Series From old datasheet system
|
Toshiba
|
TMP93C071 E_030331_93C071_SUMMARY |
16-Bit Microcontroller TLCS-900 Family: 900/L Series From old datasheet system
|
Toshiba
|
TMP95FW54A |
16-Bit Microcontroller TLCS-900 Family: 900/H Series
|
Toshiba
|
1N2282 1N1185A 1N1612 1N3055 1N4510 1N3573R 1N1581 |
35 A, 300 V, SILICON, RECTIFIER DIODE, DO-5 40 A, 150 V, SILICON, RECTIFIER DIODE, DO-5 5 A, 50 V, SILICON, RECTIFIER DIODE, DO-4 0.125 A, SILICON, SIGNAL DIODE 12 A, 1000 V, SILICON, RECTIFIER DIODE, DO-4 3.5 A, 500 V, SILICON, RECTIFIER DIODE, DO-4 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-4 1 A, 400 V, SILICON, SIGNAL DIODE, DO-4 1 A, 200 V, SILICON, SIGNAL DIODE, DO-4 0.8 A, SILICON, SIGNAL DIODE 35 A, 800 V, SILICON, RECTIFIER DIODE, DO-5 275 A, 150 V, SILICON, RECTIFIER DIODE, DO-9
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CPR1-120LEADFREE CPR1-080LEADFREE CPR1-100LEADFREE |
1 A, 1200 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN 1 A, 800 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN 1 A, 1000 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN 1 A, 100 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN 1 A, 600 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN 1 A, 400 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN 1 A, 200 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN
|
Central Semiconductor, Corp.
|
SDR939/61 SDR936-61 SDR938/61 SDR936/61 |
30 AMP 600-900 VOLTS 80 nsec ULTRA FAST RECTIFIER 30 A, 600 V, SILICON, RECTIFIER DIODE, TO-61 30 AMP 600-900 VOLTS 80 nsec ULTRA FAST RECTIFIER 30 A, 800 V, SILICON, RECTIFIER DIODE, TO-61 30 AMP 600-900 VOLTS 80 nsec ULTRA FAST RECTIFIER 30 A, 900 V, SILICON, RECTIFIER DIODE, TO-61
|
Solid States Devices, Inc. Solid State Devices, Inc.
|
APT46GA90JD40 |
High Speed PT IGBT Insulated Gate Bipolar Transistor - Power MOS 8; Package: ISOTOP®; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 46; 87 A, 900 V, N-CHANNEL IGBT
|
Microsemi Corporation Microsemi, Corp.
|
2SK3077 2SK307707 |
SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM)
|
Toshiba Semiconductor
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