| PART |
Description |
Maker |
| AD8684ARUZ-REEL AD8682-15 AD8682 |
Dual Low Power, High Speed JFET Operational Amplifier
Dual/Quad Low Power, High Speed
Quad Low Power, High Speed JFET Operational Amplifiers; Package: TSSOP; No of Pins: 14; Temperature Range: Industrial QUAD OP-AMP, 4000 uV OFFSET-MAX, 3.5 MHz BAND WIDTH, PDSO14
|
Analog Devices, Inc.
|
| TC1426CPA TC1427 TC1427CPA TC1428 TC1428COA TC1427 |
CSCA-A Series Hall-effect based, open-loop current sensor, Gallant connector, 600 A rms nominal, ±900 A range 1.2A的双路高速MOSFET驱动
1.2A Dual High-Speed MOSFET Drivers 1.2A的双路高速MOSFET驱动
The TC1426/27/28 are a family of 1.2A dual high- speed drivers. CMOS fabrication is used for low power consumption and high efficiency. These devices are fabricated using an epitaxial layer to effectively short out the intrinsic parasitic
The TC1426/27/28 are a family of 1.2A dual high- speed drivers. CMOS fabrication is used for low power consumption and high efficiency. ...
|
Microchip Technology, Inc.
MICROCHIP[Microchip Technology]
|
| IRS26072DSPBF |
The IRS26072D is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels.
|
International Rectifier
|
| BUX12 |
HIGH CURRENT, HIGH SPEED , HIGH POWER TRANSISTOR
|
Comset Semiconductor
|
| BUX41N |
HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR
|
New Jersey Semi-Conduct...
|
| 2SC2928 |
HIGH VOLTAGE, HIGH SPEED AND HIGH POWER SWITCHING
|
HITACHI[Hitachi Semiconductor]
|
| 2N6032 2N6033 |
HIGH CURRENT HIGH SPEED HIGH POWER TRANSISTORS
|
ETC
GESS[GE Solid State]
|
| BUX33B BUX33A |
HIGH VOLTAGE HIGH SPEED HIGH POWER TRANSISTORS
|
Semelab
|
| BUX1212 |
HIGH CURRENT, HIGH SPEED , HIGH POWER TRANSISTOR
|
Comset Semiconductor
|
| 2SC2616 |
HIGH VOLTAGE, HIGH SPEED AND HIGH POWER SWITCHING
|
Unknow
ETC[ETC]
List of Unclassifed Manufacturers
|
| K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作）。在经营商业和工业温度范围
RES-140 0.0625W 1% THICK FILM
128K x 8 high speed static RAM, 5V operating, 15ns
128K x 8 high speed static RAM, 5V operating, 10ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| IRS2332JTRPBF IRS2330D |
High Voltage High Speed power MOSFET and IGBT Driver. Compatible down to 3.3V Logic. Deadtime 0.7us.
High Voltage High Speed power MOSFET and IGBT Driver with Integrated Bootstrap Diode. Compatible down to 3.3V Logic. Deadtime 2.0us.
|
International Rectifier
|
