| PART |
Description |
Maker |
| 3SK134B 3SK134B-T1 3SK134B-VM 3SK134B-T2 |
Dual-gate MOS FET
RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD
|
NEC
|
| BF998WR |
N-channel dual-gate MOS-FET
|
Philips
|
| BF998WR |
N-channel dual-gate MOS-FET
|
Philips Semiconductors
|
| 3SK295 |
Silicon N-Channel Dual Gate MOS FET
|
HITACHI[Hitachi Semiconductor]
|
| 3SK297ZP-TL-E 3SK297 |
Silicon N-Channel Dual Gate MOS FET
|
Renesas Electronics Corporation
|
| BF1203 BF1203-2015 |
Dual N-channel dual gate MOS-FET
|
Quanzhou Jinmei Electro...
NXP Semiconductors
|
| BF1205C |
Dual N-channel dual gate MOS-FET
|
PHILIPS[Philips Semiconductors]
|
| BF998A BF998B BF998RA BF998RAW BF998RB BF998RBW BF |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode N沟道双栅MOS - Fieldeffect四极管，耗尽
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
RES,Metal Glaze,33.2Ohms,200WV,1 /-% Tol,-100,100ppm-TC,1210-Case RoHS Compliant: No
N?Channel Dual Gate MOS-Fieldeffect Tetrode,Depletion Mode
From old datasheet system
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
Vishay Telefunken
VISAY[Vishay Siliconix]
|
| 3SK319 |
Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier
|
Hitachi Semiconductor
|
| UPA1770 UPA1770G PA1770 G14055EJ1V0DS00 UPA1770G-E |
P-channel enhancement type power MOS FET(Dual type)
SWITCHING DUAL P-CHANNEL POWER MOS FET INDUSTRIAL USE
MOS Field Effect Transistor
From old datasheet system
|
NEC[NEC]
|
| 3SK298ZP-TL-E |
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET LEAD FREE, SC-82, CMPAK-4
Silicon N-Channel Dual Gate MOS FET
|
Renesas Electronics Corporation
|
| BF997 |
N-channel dual-gate MOS-FET
Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
