| PART |
Description |
Maker |
| SPP02N80C3 |
for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...
|
Infineon
|
| SPI08N80C3 |
for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...
|
Infineon
|
| 2SC3752 |
NPN Triple Diffused Planar Silicon Transistor 800V/3A Switching Regulator Applications
|
SANYO
|
| SPA11N80C3 SPP11N80C3 |
for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...
Cool MOS⑩ Power Transistor
|
Infineon Technologies AG
|
| 2SC3153 2SC3153M |
TRANSISTOR | BJT | NPN | 800V V(BR)CEO | 6A I(C) | TO-247VAR 晶体管|晶体管|叩| 800V的五（巴西）总裁| 6A条一（c）|47VAR
POWER TRANSISTORS(6A/800V/100W)
POWER TRANSISTORS(6A,800V,100W)
POWER TRANSISTORS(6A800V100W)
|
MOSPEC SEMICONDUCTOR CORP.
MOSPEC[Mospec Semiconductor]
|
| 2SC3459 0330 |
NPN Triple Diffused Planar Silicon Transistor 800V/4.5A Switching Regulator Applications
From old datasheet system
|
Sanyo
|
| 1N458 1N458A 1N458B |
Diode Switching 800V 1A 2-Pin DO-41
LOW LEAKAGE DIFFUSED SILICON PLANAR DIODE
|
New Jersey Semiconductors
New Jersey Semi-Conductor P...
|
| APT8075 APT8075BN APT8090BN |
POWER MOS V 800V 13.0A 0.75 Ohm / 800V 12.0A 0.90 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
| IRFBE30 IRFBE30PBF |
800V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=800V, Rds(on)=3.0ohm, Id=4.1A)
Power MOSFET(Vdss=800V/ Rds(on)=3.0ohm/ Id=4.1A)
|
International Rectifier
|
| FQB6N80 FQI6N80 FQB6N80TM |
800V N-Channel QFET
800V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
http://
|
| SPW11N80C3 INFINEONTECHNOLOGIESAG-SPW11N80C3 |
Cool MOS Power Transistor
Cool MOS™ Power Transistor
for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...
|
INFINEON[Infineon Technologies AG]
|
